All-solution-processed Si films with broadband and omnidirectional light absorption.

Silicon photonic structures have attracted a great deal of attention due to their potential benefits of efficient light management in optoelectronic applications. In this paper, we demonstrate broadband optical absorption enhancement in solution-processed amorphous silicon (a-Si) by leveraging the advantages of silicon photonic structures. Graded refractive index silicon multi-layer structures are employed by modulating optical constants with simple process optimization, resulting in significantly improved reflectance over a broad range of visible wavelengths.

Photodetectors: Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3-Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment (Adv. Mater. 31/2016).

The effects of triphenylphosphine (PPh3 ) and (3-amino-propyl)triethoxysilane (APTES) on a rhenium diselenide (ReSe2 ) photodetector are systematically studied by J.-H. Park and co-workers on page 6711 in comparison with a conventional MoS2 device.

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design.

The effects of graphene n-doping on a metal-graphene contact are studied in combination with 1D edge contacts, presenting a record contact resistance of 23 Ω μm at room temperature (19 Ω μm at 100 K). This contact scheme is applied to a graphene-perovskite hybrid photodetector, significantly improving its performance (0.6 → 1.