Coulomb-induced emission time shifts in high-order harmonic generation from H2.

Accurate emission times of high-order harmonic generation (HHG) are vital for high-precision ultrafast detection in attosecond science, but a quantitative analysis of Coulomb effects on this time is absent in the molecular HHG. Here, we investigate the Coulomb-induced emission-time shift in HHG of H2+ with two different internuclear distances R, where the times obtained via the Gabor transform of numerical data from solving the time-dependent Schrödinger equation are used as simulation experiment results. Based on the molecular strong-field approximation, we develop a trajectory-resolved classical model that takes into account the molecular two-center structure.

Methodology for Testing Key Parameters of Array-Level Small-Area Hafnium-Based Ferroelectric Capacitors Using Time-to-Digital Converter and Capacitance Calibration Circuits.

Hafnium-based ferroelectric memories are a promising approach to enhancing integrated circuit performance, offering advantages such as miniaturization, compatibility with CMOS technology, fast read and write speeds, non-volatility, and low power consumption. However, FeRAM (Ferroelectric Random Access Memory) still faces challenges related to endurance and retention susceptibility to process variations. Hence, testing and obtaining the core parameters of ferroelectric capacitors continuously is essential to investigate these phenomena and explore the potential solution.

Oxygen-deficient TiO interlayer enabling Li-rich Mn-based layered oxide cathodes with enhanced reversible capacity and cyclability.

The unique anion redox mechanism of Li-rich Mn-based layered oxide (LMLO) cathodes endows them with a higher specific capacity compared with conventional cathodes. However, the irreversible anion redox reactions can cause structural degradation and sluggish electrochemical kinetics in the cathode, resulting in a poor electrochemical performance in the batteries. Thus, to address these issues, a single-sided conductive oxygen-deficient TiO interlayer was applied on a commercial Celgard separator as a coating layer towards the LMLO cathode.

Mitigation of Oxygen Evolution and Phase Transition of Li-Rich Mn-Based Layered Oxide Cathodes by Coating with Oxygen-Deficient Perovskite Compounds.

Li-rich Mn-based layered oxide cathodes with a high discharge capacity hold great promise for high energy density lithium-ion batteries. However, application is hampered by voltage and capacity decay and gas evolution during cycling due to interfacial side reactions. Here, we report coating by oxygen-deficient perovskite LaSrCoO using the Pechini process.

Probabilistic Circuit Implementation Based on P-Bits Using the Intrinsic Random Property of RRAM and P-Bit Multiplexing Strategy.

Probabilistic computing is an emerging computational paradigm that uses probabilistic circuits to efficiently solve optimization problems such as invertible logic, where traditional digital computations are difficult to solve. This paper proposes a true random number generator (TRNG) based on resistive random-access memory (RRAM), which is combined with an activation function implemented by a piecewise linear function to form a standard p-bit cell, one of the most important parts of a p-circuit. A p-bit multiplexing strategy is also applied to reduce the number of p-bits and improve resource utilization.

Single-Crystalline Cathodes for Advanced Li-Ion Batteries: Progress and Challenges.

Single-crystalline cathodes are the most promising candidates for high-energy-density lithium-ion batteries (LIBs). Compared to their polycrystalline counterparts, single-crystalline cathodes have advantages over liquid-electrolyte-based LIBs in terms of cycle life, structural stability, thermal stability, safety, and storage but also have a potential application in solid-state LIBs. In this review, the development history and recent progress of single-crystalline cathodes are reviewed, focusing on properties, synthesis, challenges, solutions, and characterization.

Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes.

Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications. However, as technology nodes shrink, RRAM faces many issues, which can significantly degrade RRAM performance.