Multilevel resistive switching memory in lead-free double perovskite La[Formula: see text]NiFeO[Formula: see text] films.

Dense and flat La[Formula: see text]NiFeO[Formula: see text] (LNFO) films were fabricated on the indium tin oxide-coated glass (ITO/glass) substrate by sol-gel method. The bipolar resistive switching behavior (BRS) could be maintained in 100 cycles and remained after 30 days, indicating that the LNFO-based RS device owned good memory stability. Surprisingly, the multilevel RS characteristics were firstly observed in the Au/LNFO/ITO/glass device.

Light-activated Multilevel Resistive Switching Storage in Pt/CsAgBiBr/ITO/Glass Devices.

High-density CsAgBiBr films with uniform grains were prepared by a simple one-step and low-temperature sol-gel method on indium tin oxide (ITO) substrates. An explicit tristate bipolar resistance switching behavior was observed in the Pt/Cs AgBiBr/ITO/glass devices under irradiation of 10 mW/cm (445 nm). This behavior was stable over 1200 s.

Resistive Switching Characteristics Improved by Visible-Light Irradiation in a CsAgBiBr-Based Memory Device.

Light-modulated lead-free perovskites-based memristors, combining photoresponse and memory, are promising as multifunctional devices. In this work, lead-free double perovskite CsAgBiBr films with dense surfaces and uniform grains were prepared by the low-temperature sol-gel method on indium tin oxide (ITO) substrates. A memory device based on a lead-free double perovskite CsAgBiBr film, Pt/CsAgBiBr/ITO/glass, presents obvious bipolar resistive switching behavior.