Time-dependent universal conductance fluctuations in IrO2 nanowires.

: Single-crystalline iridium dioxide nanowires show the time-dependent universal conductance fluctuations (TUCFs) at cryogenic temperatures. The conductance fluctuations persist up to temperature T as high as nearly 10 K. The root-mean-square TUCF magnitudes increase with decreasing T, reaching approximately 0.

Metallic conduction and large electron-phonon-impurity interference effect in single TiSi nanowires.

We report on the first electrical characterizations of single-crystalline TiSi nanowires (NWs) synthesized by chemical vapor deposition reactions. By utilizing the focused-ion-beam-induced deposition technique, we have delicately made four-probe contacts onto individual NWs. The NW resistivities have been measured between 2 and 300 K, which reveal overall metallic conduction with small residual resistivity ratios in the NWs.

Identification of putative miRNAs from the deep-branching unicellular flagellates.

MicroRNAs (miRNAs) are a class of extensively studied RNAi-associated small RNAs that play a critical role in eukaryotic gene regulation. However, knowledge on the miRNA and its regulation in unicellular eukaryotes is very limited. In order to obtain a better understanding on the origin of miRNA regulation system, we used deep-sequencing technology to investigate the miRNA expression pattern in four deep-branching unicellular flagellates: Giardia lamblia, Trichomonas vaginalis, Tritrichomonas foetus, and Pentatrichomonas hominis.

Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K.

Single-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermal evaporation method. The as-grown NWs were typically 100-300 nm in diameter and a few microm long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by the electron-beam lithography technique.

Electrical conduction mechanisms in natively doped ZnO nanowires.

Single-crystalline zinc oxide (ZnO) nanowires (NWs) with diameters of 90-200 nm were synthesized by the thermal evaporation method. Four-probe Ti/Au electrodes were made by the standard electron-beam lithography technique, and the intrinsic resistivities, rho(T), of individual NWs were measured over a wide range of temperature from 300 down to 0.25 K.

Thermal fluctuation-induced tunneling conduction through metal nanowire contacts.

The temperature behavior of how electrons propagate through an insulating electronic contact formed at the interface between a submicron Cr/Au electrode and a metallic RuO(2) nanowire (NW) has been studied between 300 and 1 K. The NWs are typically of ∼70 nm in diameter and a few microns long. The submicron electrodes were fabricated by the standard electron-beam lithography technique.