Self-powered γ-InSe/p-Si heterojunction for photodetection: exploring humidity and light intensity dependent photoresponse.

In this study, high-quality γ-InSe thin films were successfully deposited on p-Si substrates via the RF sputtering technique. Structural characterization using XRD and Raman spectroscopy confirmed the formation of the hexagonal γ-phase of InSe film. FESEM analysis revealed the presence of small, homogeneous, and well-defined grains in the prepared γ-InSe film.

Lead-Free CsAgBiCl Double Perovskite: Experimental and Theoretical Insights into the Self-Trapping for Optoelectronic Applications.

Lead-free double perovskites (DPs) will emerge as viable and environmentally safe substitutes for Pb-halide perovskites, demonstrating stability and nontoxicity if their optoelectronic property is greatly improved. Doping has been experimentally validated as a powerful tool for enhancing optoelectronic properties and concurrently reducing the defect state density in DP materials. Fundamental understanding of the optical properties of DPs, particularly the self-trapped exciton (STEs) dynamics, plays a critical role in a range of optoelectronic applications.

Enhanced photoresponse of CuZnSnS absorber thin films fabricated using multi-metallic stacked nanolayers.

CuZnSnS (CZTS) thin films have attracted considerable attention as potential candidates for photovoltaic absorber materials. In a vacuum deposition technique, a sputtering stacked metallic layer followed by a thermal process for sulfur incorporation is used to obtain high-quality CZTS thin films. In this work, for fabricating CZTS thin films, we have done a 3LYS (3 layers), 6LYS, and 9LYS sequential deposition of Sn/ZnS/Cu metal stack (.

Self-biased photodetector using 2D layered bismuth triiodide (BiI) prepared using the spin coating method.

Layered bismuth triiodide (BiI) is a 2D material that has emerged as an ideal choice for optical sensors. Although BiI has been prepared using vacuum-based deposition techniques, there is a dearth of research studies on synthesizing this material using chemical route. The present work uses a facile spin coating method with varying rotation speeds (rpm) to fabricate BiI material thin films for photodetection applications.

Synthesis, Structural and Optical Properties of ZrBiSe Nanoflowers: A Next-Generation Semiconductor Alloy Material for Optoelectronic Applications.

ZrBiSe nanoflower-like morphology was successfully prepared using a solvothermal method, followed by a quenching process for photoelectrochemical water splitting applications. The formation of ZrBiSe was confirmed by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). The estimated value of work function and band gap were found to be 5.

Investigations on synthesis, characterization and humidity sensing properties of ZnO and ZnO-ZrO composite nanoparticles prepared by ultrasonic assisted wet chemical method.

In the present investigations, Zinc oxide (ZnO) and ZnO-ZrO composite nanoparticles were synthesized by ultrasonic assisted wet chemical method to investigate their structural, optical and humidity sensing properties. The synthesized nanoparticles were characterized by the techniques like X ray diffraction (XRD), UV-Vis absorption spectroscopy, Scanning Electron Microscopy (SEM) and Energy Dispersive Spectroscopy (EDS). XRD and EDS were employed to confirm the phase formation and phase purity respectively.