Regulation of Interface Schottky Barrier and Photoelectric Properties in Carbon-Based HTL-Free Perovskite Solar Cells.

Carbon-based hole transport layer (HTL)-free perovskite solar cells (C-PSCs) receive a lot of attention because of their simplified preparation technology, low price, and good hydrophobicity. However, the Schottky junction formed at the interface between perovskite and carbon poles affects the photogenerated carrier extraction and conversion efficiency. In this paper, 4-trifluoromethyl-2-pyridinecarboxylic acid (TPCA) is used to modify the perovskite films.

Microstress for metal halide perovskite solar cells: from source to influence and management.

The power conversion efficiency of metal halide perovskite solar cells (PSCs) has increased dramatically in recent years, but there are still major bottlenecks in the commercial application of such materials, including intrinsic instability caused by external stimuli such as water, oxygen, and radiation, as well as local stress generated inside the perovskite and external stress caused by poor interlayer contact. However, some crucial sources of instability cannot be overcome by conventional encapsulation engineering. Among them, the tensile strain can weaken the chemical bonds in the perovskite lattice, thereby reducing the defects formation energy and activation energy of ion migration and accelerating the degradation rate of the perovskite crystal.

Strengthened Interficial Adhesive Fracture Energy by Young's Modulus Matching Degree Strategy in Carbon-Based HTM Free MAPbI Perovskite Solar Cell with Enhanced Mechanical Compatibility.

Carbon-based hole transport layer-free perovskite solar cells (PSCs) based on methylammonium lead triiodide (MAPbI ) have become one of the research focus due to low cost, easy preparation, and good optoelectronic properties. However, instability of perovskite under vacancy defects and stress-strain makes it difficult to achieve high-efficiency and stable power output. Here, a soft-structured long-chain 2D pentanamine iodide (abbreviated as "PI") is used to improve perovskite quality and interfacial mechanical compatibility.