Design, Fabrication, and Implementation of an Array-Type MEMS Piezoresistive Intelligent Pressure Sensor System.

To meet the radiosonde requirement of high sensitivity and linearity, this study designs and implements a monolithically integrated array-type piezoresistive intelligent pressure sensor system which is made up of two groups of four pressure sensors with the pressure range of 0⁻50 kPa and 0⁻100 kPa respectively. First, theoretical models and ANSYS (version 14.5, Canonsburg, PA, USA) finite element method (FEM) are adopted to optimize the parameters of array sensor structure.

Design Optimization and Fabrication of High-Sensitivity SOI Pressure Sensors with High Signal-to-Noise Ratios Based on Silicon Nanowire Piezoresistors.

In order to meet the requirement of high sensitivity and signal-to-noise ratios (SNR), this study develops and optimizes a piezoresistive pressure sensor by using double silicon nanowire (SiNW) as the piezoresistive sensing element. First of all, ANSYS finite element method and voltage noise models are adopted to optimize the sensor size and the sensor output (such as sensitivity, voltage noise and SNR). As a result, the sensor of the released double SiNW has 1.

Optical MEMS pressure sensor based on a mesa-diaphragm structure.

An optical MEMS pressure sensor based on a mesa-diaphragm is presented. The operating principle of the sensor is expatiated by Fabry-Perot (F-P) interference. Both the mechanical model and the signal averaging effect of the mesa diaphragm is validated by simulation, which declares that the mesa diaphragm is superior to the planar one on the parallelism and can reduce the signal averaging effect.