Lateral monolayer MoS homojunction devices prepared by nitrogen plasma doping.

Monolayer MoS possesses good electron mobility, structural flexibility and a direct band gap, enabling it to be a promising candidate for flexible and wearable optoelectronic devices. In this article, the lateral monolayer MoS homojunctions were prepared by a nitrogen plasma selective doping technique. The monolayer MoS thin films were synthesized by chemical vapor deposition and characterized by photoluminescence, atom force microscope and Raman spectroscopy.

Photoresponse-Bias Modulation of a High-Performance MoS Photodetector with a Unique Vertically Stacked 2H-MoS/1T@2H-MoS Structure.

Monolayer 2H-phase MoS-based photodetectors exhibit high photon absorption but suffer from low photoresponse, which severely limits their applications in optoelectronic fields. The metallic 1T phase of MoS, while transporting carriers faster, shows negligible response to visible light, which limits its usage in photodetectors. Herein, we propose an ultrafast-response MoS-based photodetector having a channel that consists of a 2H-MoS sensitizing monolayer on top of 1T@2H-MoS.

Low-damaged p-type doping of MoS using direct nitrogen plasma modulated by toroidal-magnetic-field.

Low damaged doping of two-dimensional (2D) materials proves to be a significant obstacle in realizing fundamental devices such as p-n junction diodes and transistors due to its atom layer thickness. In this work, the defect formation energy and p-type conduction behavior of nitrogen plasma doping are investigated by first principle calculation. Low damaged substitutional p-type doping in MoS using low energy nitrogen plasma composed of N and N is achieved by a novel toroidal magnetic field (TMF).