Publications by authors named "Yishu Foo"

Electromodulation (EM) spectroscopy, a powerful technique to monitor the changes in polarizability p and dipole moment u of materials upon photo-excitation, can bring direct insight into the excitonic properties of materials. However, extracting Δp and Δu from the electromodulation spectrum relies on fitting with optical absorption of the materials where optical effect in different device geometries might introduce large variation in the extracted values. Here, we demonstrate a systematic electromodulation study with various fitting approaches in both commonly adopted reflection and transmission device architectures.

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In this work, we have synthesized CdGaO alloy thin films at room temperature over the entire composition range by radio frequency magnetron sputtering. We found that alloy films with high Ga contents of x > 0.3 are amorphous.

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High performance organic photovoltaic devices typically rely on type-II P/N junctions for assisting exciton dissociation. Heremans and co-workers recently reported a high efficiency device with a third organic layer which is spatially separated from the active P/N junction; but still contributes to the carrier generation by passing its energy to the P/N junction via a long-range exciton energy transfer mechanism. In this study the authors show that there is an additional mechanism contributing to the high efficiency.

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The effects of gold nanoparticles (AuNPs) incorporated in the hole transporting layer (HTL) of poly[[4,8-bis[(2-ethylhexyl)oxy] benzo[1,2-b:4,5-b'] dithiophene-2, 6-diyl] [3-fluoro-2-[(2-ethylhexy)carbonyl]thieno[3,4-b]thiophened iyl]] (PTB7): [6,6]-phenyl C71 butyric acid methyl ester (PC71BM) based solar cells are being systematically investigated in terms of the optical properties, electrical properties, and photovoltaic performance. The impacts of AuNPs on the optical response of the devices are modeled by finite-difference time-domain (FDTD) simulation. The size of the AuNPs used in this work is around 50-70 nm, so that 10-20 nm penetrated from the HTL into the active layer.

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