High-Performance Red Transparent Quantum Dot Light-Emitting Diodes via Fully Solution-Processed MXene/Ag NWs Top Electrode.

The integration of high-performance transparent top electrodes with the functional layers of transparent quantum dot light-emitting diodes (T-QLEDs) poses a notable challenge. This study presents a composite transparent top electrode composed of MXene and Ag NWs. The composite electrode demonstrates exceptional transparency (84.

Atomic Layer-Deposited Silane Coupling Agent for Interface Passivation of Quantum Dot Light-Emitting Diodes.

Inserting an insulating layer between the charge transport layer (CTL) and quantum dot emitting layer (QDL) is widely used in improving the performance of quantum dot light-emitting diodes (QLEDs). However, the additional layer inevitably leads to energy loss and joule heat. Herein, a monolayer silane coupling agent is used to modify the said interfaces via the self-limiting adsorption effect.

Observation and Suppression of Stacking Interface States in Sandwich-Structured Quantum Dot Light-Emitting Diodes.

Interfacial quality of functional layers plays an important role in the carrier transport of sandwich-structured devices. Although the suppression of interface states is crucial to the overall device performance, our understanding on their formation and annihilation mechanism via direct characterization is still quite limited. Here, we present a thorough study on the interface states present in the electron transport layer (ETL) of blue quantum dot (QD) light-emitting diodes (QLEDs).