Quantifying the impact of upscaled parameters on radionuclide transport in three-dimensional fracture-matrix systems.

Assessing the long-term safety of geological repositories for high-level radioactive waste is critically dependent on understanding radionuclide transport in multi-scale fractured rocks. This study explores the influence of upscaled parameters on radionuclide movement within a three-dimensional fracture-matrix system using a discrete fracture-matrix (DFM) model. The developed numerical simulation workflow includes creating a random discrete fracture network, meshing of the fractures and matrix, assigning upscaled parameters, and conducting finite element simulations.

III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template.

Silicon photonics is becoming a mainstream data-transmission solution for next-generation data centers, high-performance computers, and many emerging applications. The inefficiency of light emission in silicon still requires the integration of a III/V laser chip or optical gain materials onto a silicon substrate. A number of integration approaches, including flip-chip bonding, molecule or polymer wafer bonding, and monolithic III/V epitaxy, have been extensively explored in the past decade.

5 x 20 Gb/s heterogeneously integrated III-V on silicon electro-absorption modulator array with arrayed waveguide grating multiplexer.

We present a five-channel wavelength division multiplexed modulator module that heterogeneously integrates a 200 GHz channel-spacing silicon arrayed-waveguide grating multiplexer and a 20 Gbps electro-absorption modulator array, showing the potential for 100 Gbps transmission capacity on a 1.5x0.5 mm² footprint.

High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN junctions. This doping profile enabled both high modulation efficiency of V(π)L(π) = 1.5~2.

High-speed silicon modulator based on cascaded microring resonators.

A high-speed silicon modulator based on cascaded double microring resonators is demonstrated in this paper. The proposed modulator experimentally achieved 40 Gbit/s modulation with an extinction ratio of 3.9 dB.

25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions.

A high-speed depletion-mode silicon-based microring modulator with interleaved PN junctions optimized for high modulation efficiency and large alignment tolerance is demonstrated. It is fabricated using standard 0.18 μm complementary metal-oxide-semiconductor processes and provides low V(π)L(π)s of 0.