Nanoscale lithography via electron beam induced deposition.

We demonstrate the resolution and characteristics of a nanolithography process utilizing electron beam induced deposition (EBID) of W(CO)(6) and C(10)H(8) to define the imaging and masking layers. Lines and dot matrices were defined/written with various electron beam doses onto both polymethylmethacrylate (PMMA) coated silicon substrates (PMMA-Si) and bare silicon substrates (Si). The selectivity of the W(CO)(x) for the PMMA dry development process (no measurable etching) and the silicon ( approximately 18:1) reactive ion etch was very good.

Nanoparticle assembly via the dewetting of patterned thin metal lines: understanding the instability mechanisms.

Nanosecond pulsed laser heating was used to control the assembly of spatially correlated nanoparticles from lithographically patterned pseudo-one-dimensional nickel lines. The evolution of the nickel line instabilities and nanoparticle formation with a correlated size and spacing was observed after a series of laser pulses. To understand the instabilities that direct the nanoparticle assembly, we have carried out nonlinear time-dependent simulations and linear stability analysis based on a simple hydrodynamic model.