An efficient Si light-emitting diode based on an n- ZnO/SiO2-Si nanocrystals-SiO2/p-Si heterostructure.

Si nanocrystals embedded in a SiO2 matrix and an n-type Al-doped ZnO (ZnO:Al) layer were applied to improve the external quantum efficiency from Si in n- ZnO/SiO2-Si nanocrystals-SiO2/p-Si heterojunction light-emitting diodes (LEDs). The Si nanocrystals were grown by low pressure chemical vapor deposition and the ZnO:Al layer was prepared by atomic layer deposition. The n-type ZnO:Al layer acts as an electron injection layer, a transparent conductive window, and an anti-reflection coating to increase the light extraction efficiency.

Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO(2) composite/p-AlGaN heterojunction light-emitting diodes.

This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at lambda~380 nm in the n-ZnO/ZnO nanodots-SiO(2) composite/p- Al(0.12)Ga(0.88)N heterojunction light-emitting diode.