Nanoscale Res Lett
January 2015
This work presents an experimental study on the dislocation luminescence in GaN by nanoindentation, cathodoluminescence, and Raman. The dislocation luminescence peaking at 3.12 eV exhibits a series of special properties in the cathodoluminescence measurements, and it completely disappears after annealing at 500°C.
View Article and Find Full Text PDFPhys Chem Chem Phys
October 2012
The synthesis of hybrid nanostructures with controlled size, shape, composition and morphology has attracted increasing attention due to the fundamental and applicable interest. Here, we demonstrate the synthesis and optical properties of hierarchical CdSe-Au hybrid nanostructures with zinc blende (ZB) CdSe nanocrystals (NCs). For 3.
View Article and Find Full Text PDFElasto-plastic mechanical deformation behaviors of c-plane (0001) and nonpolar GaN single crystals are studied using nanoindentation, cathodoluminescence, and transmission electron microscopy. Nanoindentation tests show that c-plane GaN is less susceptible to plastic deformation and has higher hardness and Young's modulus than the nonpolar GaN. Cathodoluminescence and transmission electron microscopy characterizations of indent-induced plastic deformation reveal that there are two primary slip systems for the c-plane GaN, while there is only one most favorable slip system for the nonplane GaN.
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