Electrical and dielectric parameters in TiO-NW/Ge-NW heterostructure MOS device synthesized by glancing angle deposition technique.

This paper reports the catalyst-free coaxial TiO/Ge-nanowire (NW) heterostructure synthesis using the glancing angle deposition (GLAD) technique integrated into an electron beam evaporator. The frequency and voltage dependence of the capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of an Ag/TiO-NW/Ge-NW/Si device over a wide range of frequency (10 kHz-5 MHz) and voltage (- 5 V to + 5 V) at room temperature were investigated. The study established strong dependence on the applied frequency and voltage bias.

Scalable Fabrication of Organic Single-Crystalline Wafers for Reproducible TFT Arrays.

Building on significant developments in materials science and printing technologies, organic semiconductors (OSCs) promise an ideal platform for the production of printed electronic circuits. However, whether their unique solution-processing capability can facilitate the reliable mass manufacture of integrated circuits with reasonable areal coverage, and to what extent mass production of solution-processed electronic devices would allow substantial reductions in manufacturing costs, remain controversial. In the present study, we successfully manufactured a 4-inch (c.