Polymer-Free and Dry Patterning of Wafer-Scale Two-Dimensional Semiconductors via van der Waals Delamination.

Two-dimensional (2D) semiconductors have attracted a considerable amount of interest as channel materials for future transistors. Patterning of 2D semiconductors is crucial for separating continuous monolayers into independent units. However, the state-of-the-art 2D patterning process is largely based on photolithography and high-energy plasma/RIE etching, leading to unavoidable residues and degraded device uniformity, which remains a critical challenge for the practical application of 2D electronics.

Atomic-Scale Insights into Surface Instability in Halide Perovskites.

The pathway of surface structure evolution plays a vital role in determining the stability of the halide perovskites. Understanding the mechanism of surface instability and how external stimuli interact with the surface is essential for developing strategies to mitigate the degradation of halide perovskites. Here, we directly observed structural evolutions on the surface of CsPbBr via an integrated differential phase contrast scanning transmission electron microscope.

Large-scale sub-5-nm vertical transistors by van der Waals integration.

Vertical field effect transistor (VFET), in which the semiconductor is sandwiched between source/drain electrodes and the channel length is simply determined by the semiconductor thickness, has demonstrated promising potential for short channel devices. However, despite extensive efforts over the past decade, scalable methods to fabricate ultra-short channel VFETs remain challenging. Here, we demonstrate a layer-by-layer transfer process of large-scale indium gallium zinc oxide (IGZO) semiconductor arrays and metal electrodes, and realize large-scale VFETs with ultra-short channel length and high device performance.

Facet-selective growth of halide perovskite/2D semiconductor van der Waals heterostructures for improved optical gain and lasing.

The tunable properties of halide perovskite/two dimensional (2D) semiconductor mixed-dimensional van der Waals heterostructures offer high flexibility for innovating optoelectronic and photonic devices. However, the general and robust growth of high-quality monocrystalline halide perovskite/2D semiconductor heterostructures with attractive optical properties has remained challenging. Here, we demonstrate a universal van der Waals heteroepitaxy strategy to synthesize a library of facet-specific single-crystalline halide perovskite/2D semiconductor (multi)heterostructures.

van der Waals Integration of Large-Area Monocrystalline 3D Perovskite Thin Films on Arbitrary Semiconductor Substrates for Heterojunctions.

Perovskite monocrystalline films are regarded as desirable candidates for the integration of high-performance optoelectronics due to their unique photophysical properties. However, the heterogeneous integration of a perovskite monocrystalline film with other semiconductors is fundamentally limited by the lattice mismatch, which hinders direct epitaxy. Herein, the van der Waals (vdW) integration strategy for 3D perovskites is developed, where perovskite monocrystalline films are epitaxially grown on the mother substrate, followed by its peeling off and transferring to arbitrary semiconductors, forming monocrystalline heterojunctions.

Solid-State Anion Exchange Enabled by Pluggable vdW Assembly for In Situ Halide Manipulation in Perovskite Monocrystalline Film.

The fabrication of perovskite single crystal-based optoelectronics with improved performance is largely hindered by limited processing techniques. Particularly, the local halide composition manipulation, which dominates the bandgap and thus the formation of heterostructures and emission of multiple-wavelength light, is realized via prevalent liquid- or gas-phase anion exchange with the utilization of lithography, while the monocrystalline nature is sacrificed due to polycrystalline transition in exchange with massive defects emerging, impeding carrier separation and transportation. Thus, a damage-free and lithography-free solid-state anion exchange strategy, aiming at in situ halide manipulation in perovskite monocrystalline film, is developed.

Clickable X-ray Nanoprobes for Nanoscopic Bioimaging of Cellular Structures.

Synchrotron-based X-ray microscopy (XRM) has garnered widespread attention from researchers due to its high spatial resolution and excellent energy (element) resolution. Existing molecular probes suitable for XRM include immune probes and genetic labeling probes, enabling the precise imaging of various biological targets within cells. However, immune labeling techniques are prone to cross-interference between antigens and antibodies.

Microscopy aided detection of the self-intercalation mechanism and electronic properties in chromium selenide.

Two-dimensional (2D) chromium-based self-intercalated materials CrX (0 ≤ ≤ 1, X = S, Se, Te) have attracted much attention because of their tunable magnetism with good environmental stability. Intriguingly, the magnetic and electrical properties of the materials can be effectively tuned by altering the coverage and spatial arrangement of the intercalated Cr (ic-Cr) within the van der Waals gap, contributing to different stoichiometries. Several different CrX systems have been widely investigated recently; however, those with the same stoichiometric ratio (such as CrTe) were reported to exhibit disparate magnetic properties, which still lacks explanation.

van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides.

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for next-generation electronics owing to their atomically thin structures and surfaces devoid of dangling bonds. However, establishing high-quality metal contacts with TMDs presents a critical challenge, primarily attributed to their ultrathin bodies and delicate lattices. These distinctive characteristics render them susceptible to physical damage and chemical reactions when conventional metallization approaches involving "high-energy" processes are implemented.

Edge-by-Edge Lateral Heterostructure through Interfacial Sliding.

van der Waals heterostructures (vdWHs) based on two-dimensional (2D) semiconductors have attracted considerable attention. However, the reported vdWHs are largely based on vertical device structure with large overlapping area, while the realization of lateral heterostructures contacted through 2D edges remains challenging and is majorly limited by the difficulties of manipulating the lateral distance of 2D materials at nanometer scale (during transfer process). Here, we demonstrate a simple interfacial sliding approach for realizing an edge-by-edge lateral contact.

Ag-Assisted Dry Exfoliation of Large-Scale and Continuous 2D Monolayers.

Two-dimensional (2D) semiconductors have generated considerable attention for high-performance electronics and optoelectronics. However, to date, it is still challenging to mechanically exfoliate large-area and continuous monolayers while retaining their intrinsic properties. Here, we report a simple dry exfoliation approach to produce large-scale and continuous 2D monolayers by using a Ag film as the peeling tape.

Global evaluation of key factors influencing nitrogen fertilization efficiency in wheat: a recent meta-analysis (2000-2022).

Improving nitrogen use efficiency (NUE) without compromising yield remains a crucial agroecological challenge in theory and practice. Some meta-analyses conducted in recent years investigated the impact of nitrogen (N) fertilizer on crop yield and gaseous emissions, but most are region-specific and focused on N sources and application methods. However, various factors affecting yield and N fertilizer efficiency in wheat crops on a global scale are not extensively studied, thus highlighting the need for a comprehensive meta-analysis.

Realizing On/Off Ratios over 10 for Sub-2 nm Vertical Transistors.

Vertical transistors hold promise for the development of ultrascaled transistors. However, their on/off ratios are limited by a strong source-drain tunneling current in the off state, particularly for vertical devices with a sub-5 nm channel length. Here, we report an approach for suppressing the off-state tunneling current by designing the barrier height via a van der Waals metal contact.

High-Pressure Synthesis of Single-Crystalline SnS Nanoribbons.

Two-dimensional tin monosulfide (SnS) is attractive for the development of electronic and optoelectronic devices with anisotropic characteristics. However, its shape-controlled synthesis with an atomic thickness and high quality remains challenging. Here, we show that highly crystalline SnS nanoribbons can be produced via high-pressure (0.

Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration.

The practical application of two-dimensional (2D) semiconductors for high-performance electronics requires the integration with large-scale and high-quality dielectrics-which however have been challenging to deposit to date, owing to their dangling-bonds-free surface. Here, we report a dry dielectric integration strategy that enables the transfer of wafer-scale and high-κ dielectrics on top of 2D semiconductors. By utilizing an ultra-thin buffer layer, sub-3 nm thin AlO or HfO dielectrics could be pre-deposited and then mechanically dry-transferred on top of MoS monolayers.

Wafer-scale and universal van der Waals metal semiconductor contact.

Van der Waals (vdW) metallic contacts have been demonstrated as a promising approach to reduce the contact resistance and minimize the Fermi level pinning at the interface of two-dimensional (2D) semiconductors. However, only a limited number of metals can be mechanically peeled and laminated to fabricate vdW contacts, and the required manual transfer process is not scalable. Here, we report a wafer-scale and universal vdW metal integration strategy readily applicable to a wide range of metals and semiconductors.

Strain Releasing of Flexible 2D Electronics through van der Waals Sliding Contact.

Two-dimensional (2D) materials have demonstrated promising potential for flexible electronics, owning to their atomic thin body thickness and dangling-bond-free surface. Here, we report a sliding contact device structure for efficient strain releasing. By fabricating a weakly coupled metal-2D junction with a van der Waals (vdW) gap in between, the applied strain could be effectively released through their interface sliding; hence minimized strain is transferred to the 2D lattice.

Endoepitaxial growth of monolayer mosaic heterostructures.

The controllable growth of two-dimensional (2D) heterostructure arrays is critical for exploring exotic physics and developing novel devices, yet it remains a substantial synthetic challenge. Here we report a rational synthetic strategy to fabricate mosaic heterostructure arrays in monolayer 2D atomic crystals. By using a laser-patterning and an anisotropic thermal etching process, we create periodic triangular hole arrays in 2D crystals with precisely controlled size and atomically clean edges, which function as robust templates for endoepitaxial growth of another 2D crystal, to obtain monolayer mosaic heterostructures with atomically sharp heterojunction interfaces.

The promises, challenges and pathways to room-temperature sodium-sulfur batteries.

Room-temperature sodium-sulfur batteries (RT-Na-S batteries) are attractive for large-scale energy storage applications owing to their high storage capacity as well as the rich abundance and low cost of the materials. Unfortunately, their practical application is hampered by severe challenges, such as low conductivity of sulfur and its reduced products, volume expansion, polysulfide shuttling effect and Na dendrite formation, which can lead to rapid capacity fading. The review discusses the Na-S-energy-storage chemistry, highlighting its promise, key challenges and potential strategies for large-scale energy storage systems.

A Silicon Monoxide Lithium-Ion Battery Anode with Ultrahigh Areal Capacity.

Silicon monoxide (SiO) is an attractive anode material for next-generation lithium-ion batteries for its ultra-high theoretical capacity of 2680 mAh g. The studies to date have been limited to electrodes with a relatively low mass loading (< 3.5 mg cm), which has seriously restricted the areal capacity and its potential in practical devices.