Publications by authors named "Yiju Yao"

This research presents the optimization and proposal of P- and N-type 3-stacked SiGe/Si strained super-lattice FinFETs (SL FinFET) using Low-Pressure Chemical Vapor Deposition (LPCVD) epitaxy. Three device structures, Si FinFET, SiGe FinFET, and SiGe/Si SL FinFET, were comprehensively compared with HfO = 4 nm/TiN = 80 nm. The strained effect was analyzed using Raman spectrum and X-ray diffraction reciprocal space mapping (RSM).

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We have demonstrated the method of threshold voltage (V) adjustment by controlling Ge content in the SiGe p-channel of N1 complementary field-effect transistor (CFET) for conquering the work function metal (WFM) filling issue on highly scaled MOSFET. Single WFM shared gate N1 CFET was used to study and emphasize the V tunability of the proposed Ge content method. The result reveals that the Ge mole fraction influences V of 5 mV/Ge%, and a close result can also be obtained from the energy band configuration of SiGe.

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Ferroelectric fin field-effect transistors with a trench structure (trench Fe-FinFETs) were fabricated and characterized. The inclusion of the trench structures improved the electrical characteristics of the Fe-FinFETs. Moreover, short channel effects were suppressed by completely surrounding the trench channel with the gate electrodes.

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Evanescent wave cavity ring-down absorption spectroscopy (EW-CRDS) is employed to study interaction and binding kinetics of DNA strands by using gold nanoparticles (Au NPs) as sensitive reporters. These Au NPs are connected to target DNA of study that hybridizes with the complementary DNA fixed on the silica surface. By the absorbance of Au NPs, the interaction between two DNA strands may be examined to yield an adsorption equilibrium constant of 2.

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