Many novel and promising single-photon avalanche diodes (SPADs) emerged in recent years. However, some of them may demonstrate a very high dark count rate, even tens of megahertz, especially during the development phase or at room temperature, posing new challenges to device characterization. Gating operation with a width of 10 ns can be used to suppress the dark counts not coincident with the photon arriving time.
View Article and Find Full Text PDFSilicon single-photon avalanche detectors are becoming increasingly significant in research and in practical applications due to their high signal-to-noise ratio, complementary metal oxide semiconductor compatibility, room temperature operation, and cost-effectiveness. However, there is a trade-off in current silicon single-photon avalanche detectors, especially in the near infrared regime. Thick-junction devices have decent photon detection efficiency but poor timing jitter, while thin-junction devices have good timing jitter but poor efficiency.
View Article and Find Full Text PDFHydrogen production via electrochemical water splitting is a promising approach for storing solar energy. For this technology to be economically competitive, it is critical to develop water splitting systems with high solar-to-hydrogen (STH) efficiencies. Here we report a photovoltaic-electrolysis system with the highest STH efficiency for any water splitting technology to date, to the best of our knowledge.
View Article and Find Full Text PDFPolarization manipulation is essential in almost every photonic system ranging from telecommunications to bio-sensing to quantum information. This is traditionally achieved using bulk waveplates. With the developing trend of photonic systems towards integration and miniaturization, the need for an on-chip waveguide type waveplate becomes extremely urgent.
View Article and Find Full Text PDFIn this paper, we report a broad investigation of the optical properties of germanium (Ge) quantum-well devices. Our simulations show a significant increase of carrier density in the Ge quantum wells. Photoluminescence (PL) measurements show the enhanced direct-bandgap radiative recombination rates due to the carrier density increase in the Ge quantum wells.
View Article and Find Full Text PDFIn this work, we demonstrate an improved method to simulate the characteristics of multijunction solar cell by introducing a bias-dependent luminescent coupling efficiency. The standard two-diode equivalent-circuit model with constant luminescent coupling efficiency has limited accuracy because it does not include the recombination current from photogenerated carriers. Therefore, we propose an alternative analytical method with bias-dependent luminescent coupling efficiency to model multijunction cell behavior.
View Article and Find Full Text PDFWe theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0.92Sn0.08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn-based laser on silicon.
View Article and Find Full Text PDFNanostructures have been widely used in solar cells due to their extraordinary optical properties. In most nanostructured cells, high short circuit current has been obtained due to enhanced light absorption. However, most of them suffer from lowered open circuit voltage and fill factor.
View Article and Find Full Text PDFOptical antennas can control the emission from quantum emitters by modifying the local density of optical states via the Purcell effect. A variety of nanometallic antennas have been implemented to enhance and control key photoluminescence properties, such as the decay rate, directionality and polarization. However, their implementation in active devices has been hampered by the need to precisely place emitters near an antenna and to efficiently excite them electrically.
View Article and Find Full Text PDFWe measure the group delay in an on-chip photonic-crystal device with two resonators side coupled to a waveguide. We demonstrate that such a group delay can be controlled by tuning either the propagation phase of the waveguide or the frequency of the resonators.
View Article and Find Full Text PDFCMOS image sensors with smaller pixels are expected to enable digital imaging systems with better resolution. When pixel size scales below 2 mum, however, diffraction affects the optical performance of the pixel and its microlens, in particular. We present a first-principles electromagnetic analysis of microlens behavior during the lateral scaling of CMOS image sensor pixels.
View Article and Find Full Text PDFThe pixels that make up CMOS image sensors have steadily decreased in size over the last decade. This scaling has two effects: first, the amount of light incident on each pixel decreases, making optical efficiency, i.e.
View Article and Find Full Text PDFWe demonstrate second-harmonic generation (SHG) from sub-micrometer-sized AlGaAs/AlxOy artificially birefringent waveguides. The normalized conversion efficiency is the highest ever reported. We further enhanced the SHG using a waveguide-embedded cavity formed by dichroic mirrors.
View Article and Find Full Text PDFWe report the design, fabrication and characterization of novel dichroic mirrors embedded in a tightly confining AlGaAs/Al(x)O(y) waveguide. Reflection at the first-harmonic wavelength as high as 93% is achieved, while high transmission is maintained at the second-harmonic wavelength. The measured cavity spectrum is in excellent agreement with finite-difference time-domain simulations.
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