Giant Topological Hall Effect and Colossal Magnetoresistance in Heusler Ferromagnet near Room Temperature.

Colossal magnetoresistance (CMR) is an exotic phenomenon that allows for the efficient magnetic control of electrical resistivity and has attracted significant attention in condensed matter due to its potential for memory and spintronic applications. Heusler alloys are the subject of considerable interest in this context due to the electronic properties that result from the nontrivial band topology. Here, the observation of CMR near room temperature is reported in the shape memory Heusler alloy NiMnIn, which is attributed to the combined effects of magnetic field-induced martensite twin variant reorientation (MFIR) and magnetic field-induced structural phase transformation (MFIPT).

Initialization-Free and Magnetic Field-Free Spin-Orbit p-Bits with Backhopping-like Magnetization Switching for Probabilistic Applications.

Probabilistic bits (p-bits) with thermal- and spin torque-induced nondeterministic magnetization switching are promising candidates for performing probabilistic computing. Previously reported spin torque p-bits include volatile low-energy barrier nanomagnets (LBNMs) with spontaneously fluctuating magnetizations and initialization-necessary nonvolatile magnets. However, initialization-free nonvolatile spin torque p-bits are still lacking.

Current-induced domain wall motion in a van der Waals ferromagnet FeGeTe.

The manipulation of spin textures by spin currents is of fundamental and technological interest. A particularly interesting system is the 2D van der Waals ferromagnet FeGeTe in which Néel-type skyrmions have recently been observed. The origin of these chiral spin textures is of considerable interest.

All-electrical reading and writing of spin chirality.

Spintronics promises potential data encoding and computing technologies. Spin chirality plays a very important role in the properties of many topological and noncollinear magnetic materials. Here, we propose the all-electrical detection and manipulation of spin chirality in insulating chiral antiferromagnets.

Three-dimensional racetrack memory devices designed from freestanding magnetic heterostructures.

The fabrication of three-dimensional nanostructures is key to the development of next-generation nanoelectronic devices with a low device footprint. Magnetic racetrack memory encodes data in a series of magnetic domain walls that are moved by current pulses along magnetic nanowires. To date, most studies have focused on two-dimensional racetracks.

Ionitronic manipulation of current-induced domain wall motion in synthetic antiferromagnets.

The current induced motion of domain walls forms the basis of several advanced spintronic technologies. The most efficient domain wall motion is found in synthetic antiferromagnetic (SAF) structures that are composed of an upper and a lower ferromagnetic layer coupled antiferromagnetically via a thin ruthenium layer. The antiferromagnetic coupling gives rise to a giant exchange torque with which current moves domain walls at maximum velocities when the magnetic moments of the two layers are matched.

Increased Efficiency of Current-Induced Motion of Chiral Domain Walls by Interface Engineering.

Magnetic racetrack devices are promising candidates for next-generation memories. These spintronic shift-register devices are formed from perpendicularly magnetized ferromagnet/heavy metal thin-film systems. Data are encoded in domain wall magnetic bits that have a chiral Néel structure that is stabilized by an interfacial Dzyaloshinskii-Moriya interaction.

Investigation of spin-orbit torque using current-induced magnetization curve.

Manipulation of magnetization using current-induced torque is crucial for magnetic recording devices. Recently, the spin-orbit torque (SOT) that emerges in a ferromagnetic thin film on a heavy metal is focused as a new scheme for magnetization switching in perpendicularly magnetized systems. Since the SOT provides a perpendicular effective field to the system, the formation of a magnetic multiple domain state because of Joule heating is supressed in the magnetization reversal process.