Superior P-Type Switching in InSe Nanosheets for Complementary Multifunctional Systems.

van der Waals (vdW) indium selenide (InSe) is receiving attention for its exceptional electron mobility and moderate band gap, enabling various applications. However, the intrinsic -type behavior of InSe has restricted its use predominantly to -type devices, constraining its application in complementary integrated microsystems. Here, we show superior ambipolar InSe transistors with vdW bottom contacts, achieving impressive -type on/off current ratios greater than 10 and Schottky barrier heights approaching the ideal Schottky-Mott limit.

High-Field Electron Transport and High Saturation Velocity in Multilayer Indium Selenide Transistors.

Creating a high-frequency electron system demands a high saturation velocity (υ). Herein, we report the high-field transport properties of multilayer van der Waals (vdW) indium selenide (InSe). The InSe is on a hexagonal boron nitride substrate and encapsulated by a thin, noncontinuous In layer, resulting in an impressive electron mobility reaching 2600 cm/(V s) at room temperature.

Fabrication of an Aluminum-Based Thermoelectric Module Substrate via Anodization and Nickel Plating.

In this study, a thermoelectric module substrate was fabricated by subjecting an aluminum plate to a surface treatment process. To achieve this, the aluminum-based substrate was carried out to electrolytic etching, anodization, and Ni plating. The anodization of aluminum created an oxide film, which served as an insulation layer, while the Ni plating formed a conductive circuit layer.