Work Function Adjustment by Using Dipole Engineering for TaN-Al₂O₃-Si₃N₄-HfSiO-Silicon Nonvolatile Memory.

This paper presents a novel TaN-Al₂O₃-HfSiO-SiO₂-silicon (TAHOS) nonvolatile memory (NVM) design with dipole engineering at the HfSiO/SiO₂ interface. The threshold voltage shift achieved by using dipole engineering could enable work function adjustment for NVM devices. The dipole layer at the tunnel oxide-charge storage layer interface increases the programming speed and provides satisfactory retention.