[Calculation of dislocation destiny using X-ray diffraction for 4H-SiC homoepitaxial layers].

A theoretical and experimental study on calculating dislocation destiny for 4H-SiC homoepitaxial layers has been carried out. There is some difficulty in measuring dislocation density if it is more than 10(6) * cm(-2). In the paper, a theoretical analysis is made about the effects of dislocation density on the results of X-ray diffraction, and the relationship of dislocation density and FWHM spread is obtained.

[The study of nondestructive defect characterization of SiC by cathodoluminescence].

As the general method of defect characterization is destructive, during the current research on the effect of defect on device, nondestructive defect characterization is important especially. The defects of 4H-SiC homoepitaxial layer had been observed and studied, based on the principle of cathodoluminescence (CL). The results show that the intrinsic stacking faults (SFs), threading edge dislocations (TEDs), threading screw dislocations (TSDs) and basal plane dislocations (BPDs) can be observed by cathodoluminescence.