Fabrication of Silicon Dioxide by Photo-Chemical Vapor Deposition to Decrease Detector Current of ZnO Ultraviolet Photodetectors.

Zinc oxide (ZnO)-based semiconductor is a promising application for ultraviolet photodetectors (UV PDs). The performance of ZnO UV PDs can be improved in two orientations: by reduction of the dark current and by increasing the photocurrent. In the study, we used two processes to prepare ZnO UV PDs: photochemical vapor deposition to fabricate silicon dioxide as an insulator layer and a radio frequency sputter system to prepare the ZnO film as an active layer.

Improving Field Electron Emission Properties of ZnO Nanosheets with Ag Nanoparticles Adsorbed by Photochemical Method.

Zinc oxide is a low cost and practical II-VI chemical material, which is utilized to absorb silver (Ag) nanoparticles (NPs) on zinc oxide nanosheets (ZnO NSs). Using the Ag NP-decorated ZnO NSs can improve the electrical characteristics of zinc oxide. Field electron emission characteristics of ZnO NSs and Ag-ZnO NSs indicate the turn-on fields were 5.

Detection of C-reactive protein in evanescent wave field using microparticle-tracking velocimetry.

A new technique is developed to measure the nanoparticles' brownian motions by employing microparticle-tracking velocimetry (micro-PTV) in evanescent wave field, which can provide high signal-to-noise ratio images for analyzing nanoparticles' movements. This method enables real-time detection of C-reactive proteins (CRPs) during the rapid interaction between CRPs and anti-CRP-coated nanobeads as CRP concentrations are related to the nanobeads' brownian velocity in the equilibrium state. The smallest observable nanobeads with 185 nm were utilized in this experiment to detect CRP concentrations as low as 0.