LAB-to-FAB Transition of 2D FETs: Available Strategies and Future Trends.

The last decade has seen dramatic progress in research on FETs with 2D channels. Starting from the single devices fabricated using exfoliated flakes in the early 2010s, by the early 2020s, 2D FETs being trialed for mass production and vertical stacking of 2D channels made by leading semiconductor companies. However, the industry is focused solely on transition metal dichalcogenide (TMD) channels coupled with conventional 3D oxide insulators such as AlO and HfO.

Magnetic anisotropy and ferroelectric-driven magnetic phase transition in monolayer CrGeTe.

Monolayer CrGeTe (ML-CGT) has attracted broad interest due to its novel electronic and magnetic properties. However, there are still controversies on the origin of its intrinsic magnetism. Here, by exploring the electronic and magnetic properties of ML-CGT, we find that the magnetic shape anisotropy (MSA) is vital for establishing the long-range ferromagnetism, except for the contribution from magnetocrystalline anisotropy energy (MCA).