Ultrafast Laser-Shock-Induced Confined Metaphase Transformation for Direct Writing of Black Phosphorus Thin Films.

Few-layer black phosphorus (BP) has emerged as one of the most promising candidates for post-silicon electronic materials due to its outstanding electrical and optical properties. However, lack of large-scale BP thin films is still a major roadblock to further applications. The most widely used methods for obtaining BP thin films are mechanical exfoliation and liquid exfoliation.

Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus.

Black phosphorus has been revisited recently as a new two-dimensional material showing potential applications in electronics and optoelectronics. Here we report the anisotropic in-plane thermal conductivity of suspended few-layer black phosphorus measured by micro-Raman spectroscopy. The armchair and zigzag thermal conductivities are ∼20 and ∼40 W m(-1) K(-1) for black phosphorus films thicker than 15 nm, respectively, and decrease to ∼10 and ∼20 W m(-1) K(-1) as the film thickness is reduced, exhibiting significant anisotropy.

Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling.

Although monolayer black phosphorus (BP), or phosphorene, has been successfully exfoliated and its optical properties have been explored, most of the electrical performance of the devices is demonstrated on few-layer phosphorene and ultrathin BP films. In this paper, we study the channel length scaling of ultrathin BP field-effect transistors (FETs) and discuss a scheme for using various contact metals to change the transistor characteristics. Through studying transistor behaviors with various channel lengths, the contact resistance can be extracted with the transfer length method (TLM).

Semiconducting black phosphorus: synthesis, transport properties and electronic applications.

Phosphorus is one of the most abundant elements preserved in earth, and it comprises a fraction of ∼0.1% of the earth crust. In general, phosphorus has several allotropes, and the two most commonly seen allotropes, i.

Black phosphorus-monolayer MoS2 van der Waals heterojunction p-n diode.

Phosphorene, a elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (∼10,000 cm(2)/V·s) and a ∼0.3 eV direct band gap.

Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers.

In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that the contact resistivity for metal/MoS2 junctions is defined by contact area instead of contact width. The minimum gate dependent transfer length is ∼0.

Experimental study of plane electrode thickness scaling for 3D vertical resistive random access memory.

The vertical scaling for the multi-layer stacked 3D vertical resistive random access memory (RRAM) cross-point array is investigated. The thickness of the multi-layer stack for a 3D RRAM is a key factor for determining the storage density. A vertical RRAM cell with plane electrode thickness (tm) scaled down to 5 nm, aiming to minimize 3D stack height, is experimentally demonstrated.