Point Defects in Silicon-Doped β-GaO: Hybrid-DFT Calculations.

In this work, hybrid density functional theory calculations are used to evaluate the structural and electronic properties and formation energies of Si-doped β-GaO. Overall, eight interstitial (Si) and two substitutional (Si) positions are considered. In general, our results indicate that the formation energy of such systems is significantly influenced by the charge state of the defect.

X-ray Photoelectron Spectroscopy Analysis of Scandia-Ceria-Stabilized Zirconia Composites with Different Transport Properties.

This work aims to study a possible modification in the electronic structure of scandia-ceria-stabilized zirconia (10Sc1CeSZ) ceramics sintered at different temperatures. In addition to using X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance spectroscopy to investigate the structural and electrical properties, we employed X-ray photoelectron spectroscopy (XPS) to determine the chemical state information of the atoms involved, along with compositional analysis. As expected, a significant increase in grain ionic conductivity with the sintering temperature was present.

Upper critical field and superconductor-metal transition in ultrathin niobium films.

Recent studies suggest that in disordered ultrathin films superconducting (SC) state may be intrinsically inhomogeneous. Here we investigate the nature of SC state in ultrathin Nb films, of thickness d ranging from 1.2 to 20 nm, which undergo a transition from amorphous to polycrystalline structure at the thickness [Formula: see text] nm.

Experimental study of EUV mirror radiation damage resistance under long-term free-electron laser exposures below the single-shot damage threshold.

The durability of grazing- and normal-incidence optical coatings has been experimentally assessed under free-electron laser irradiation at various numbers of pulses up to 16 million shots and various fluence levels below 10% of the single-shot damage threshold. The experiment was performed at FLASH, the Free-electron LASer in Hamburg, using 13.5 nm extreme UV (EUV) radiation with 100 fs pulse duration.