Energy-Band Engineering by Remote Doping of Self-Assembled Monolayers Leads to High-Performance IGZO/p-Si Heterostructure Photodetectors.

Metal oxide semiconductors are of great interest for enabling advanced photodetectors. However, operational instability and the absence of an appropriate doping technique hinder practical development and commercialization. Here, a strategy is proposed to dramatically increase the conventional photodetection performance, having superior stability in operational and environmental atmospheres.