Emulating biological synaptic characteristics of HfOx/AlN-based 3D vertical resistive memory for neuromorphic systems.

Here, we demonstrate double-layer 3D vertical resistive random-access memory with a hole-type structure embedding Pt/HfOx/AlN/TiN memory cells, conduct analog resistive switching, and examine the potential of memristors for use in neuromorphic systems. The electrical characteristics, including resistive switching, retention, and endurance, of each layer are also obtained. Additionally, we investigate various synaptic characteristics, such as spike-timing dependent plasticity, spike-amplitude dependent plasticity, spike-rate dependent plasticity, spike-duration dependent plasticity, and spike-number dependent plasticity.

High-Density 1R/1W Dual-Port Spin-Transfer Torque MRAM.

Spin-transfer torque magnetic random-access memory (STT-MRAM) has several desirable features, such as non-volatility, high integration density, and near-zero leakage power. However, it is challenging to adopt STT-MRAM in a wide range of memory applications owing to the long write latency and a tradeoff between read stability and write ability. To mitigate these issues, an STT-MRAM bit cell can be designed with two transistors to support multiple ports, as well as the independent optimization of read stability and write ability.