Smart pH Sensing: A Self-Sensitivity Programmable Platform with Multi-Functional Charge-Trap-Flash ISFET Technology.

This study presents a novel pH sensor platform utilizing charge-trap-flash-type metal oxide semiconductor field-effect transistors (CTF-type MOSFETs) for enhanced sensitivity and self-amplification. Traditional ion-sensitive field-effect transistors (ISFETs) face challenges in commercialization due to low sensitivity at room temperature, known as the Nernst limit. To overcome this limitation, we explore resistive coupling effects and CTF-type MOSFETs, allowing for flexible adjustment of the amplification ratio.

Implementation of Ambipolar Polysilicon Thin-Film Transistors with Nickel Silicide Schottky Junctions by Low-Thermal-Budget Microwave Annealing.

In this study, the efficient fabrication of nickel silicide (NiSi) Schottky barrier thin-film transistors (SB-TFTs) via microwave annealing (MWA) technology is proposed, and complementary metal-oxide-semiconductor (CMOS) inverters are implemented in a simplified process using ambipolar transistor properties. To validate the efficacy of the NiSi formation process by MWA, NiSi is also prepared via the conventional rapid thermal annealing (RTA) process. The Rs of the MWA NiSi decreases with increasing microwave power, and becomes saturated at 600 W, thus showing lower resistance than the 500 °C RTA NiSi.