Analytically and empirically consistent characterization of the resistive switching mechanism in a Ag conducting-bridge random-access memory device through a pseudo-liquid interpretation approach.

A new physical analysis of the filament formation in a Ag conducting-bridge random-access memory (CBRAM) device in consideration of the existence of inter-atomic attractions caused by metal bonding is suggested. The movement of Ag atoms inside the switching layer is characterized hydrodynamically using the Young-Laplace equation during set and reset operations. Both meridional and azimuthal curvatures of the Ag filament protruding from the Ag electrode are accurately calculated to track down the exact shape of the Ag filament with change in the applied voltage.