Ion Migration and Redox Reactions in Axial Heterojunction Perovskite CsPb(BrCl) Nanowire Devices Revealed by Operando Nanofocused X-ray Photoelectron Spectroscopy.

Metal-halide perovskites (MHPs) have gained substantial interest in the energy and optoelectronics field. MHPs in nanostructure forms, such as nanocrystals and nanowires (NWs), have further expanded the horizons for perovskite nanodevices in geometry and properties. A partial anion exchange within the nanostructure, creating axial heterojunctions, has significantly augmented the potential applications.

Bismuth-oxide nanoparticles: study in a beam and as deposited.

BiO is a promising material for solid-oxide fuel cells (SOFC) due to the high ionic conductivity of some phases. The largest value is reached for its δ-phase, but it is normally stable at temperatures too high for SOFC operation, while nanostructured oxide is believed to have more suitable stabilization temperature. However, to manufacture such a material with a controlled chemical composition is a challenging task.

Tuneable 2D surface Bismuth incorporation on InAs nanosheets.

The chemical bonding at the interface between compound semiconductors and metals is central in determining electronic and optical properties. In this study, new opportunities for controlling this are presented for nanostructures. We investigate Bi adsorption on 2D wurtzite InAs (112̄0) nanosheets and find that temperature-controlled Bi incorporation in either anionic- or cationic-like bonding is possible in the easily accesible range between room temperature and 400 °C.

Optical-Beam-Induced Current in InAs/InP Nanowires for Hot-Carrier Photovoltaics.

Using the excess energy of charge carriers excited above the band edge (hot carriers) could pave the way for optoelectronic devices, such as photovoltaics exceeding the Shockley-Queisser limit or ultrafast photodetectors. Semiconducting nanowires show promise as a platform for hot-carrier extraction. Proof of principle photovoltaic devices have already been realized based on InAs nanowires, using epitaxially defined InP segments as energy filters that selectively transmit hot electrons.

Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si.

Sb-based semiconductors are critical p-channel materials for III-V complementary metal oxide semiconductor (CMOS) technology, while the performance of Sb-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is typically inhibited by the low quality of the channel to gate dielectric interface, which leads to poor gate modulation. In this study, we achieve improved electrostatics of vertical GaSb nanowire p-channel MOSFETs by employing robust digital etch (DE) schemes, prior to high-κ deposition. Two different processes, based on buffer-oxide etcher (BOE) 30:1 and HCl:IPA 1:10, are compared.