LAB-to-FAB Transition of 2D FETs: Available Strategies and Future Trends.

The last decade has seen dramatic progress in research on FETs with 2D channels. Starting from the single devices fabricated using exfoliated flakes in the early 2010s, by the early 2020s, 2D FETs being trialed for mass production and vertical stacking of 2D channels made by leading semiconductor companies. However, the industry is focused solely on transition metal dichalcogenide (TMD) channels coupled with conventional 3D oxide insulators such as AlO and HfO.

Tuning Optimum Temperature Range of Bi Te -Based Thermoelectric Materials by Defect Engineering.

Bi Te -based solid solutions, which have been widely used as thermoelectric (TE) materials for the room temperature TE refrigeration, are also the potential candidates for the power generators with medium and low-temperature heat sources. Therefore, depending on the applications, Bi Te -based materials are expected to exhibit excellent TE properties in different temperature ranges. Manipulating the point defects in Bi Te -based materials is an effective and important method to realize this purpose.

Liquid-Phase Hot Deformation to Enhance Thermoelectric Performance of n-type Bismuth-Telluride-Based Solid Solutions.

Bismuth-telluride-based solid solutions are the best commercial thermoelectric materials near room temperature. For their n-type polycrystalline compounds, the maximum figures of merit (s) are often less than 1.0 due to the degraded carrier mobility resulting from the loss of texture.

Evolution of the Intrinsic Point Defects in Bismuth Telluride-Based Thermoelectric Materials.

In polycrystalline bismuth telluride-based thermoelectric materials, mechanical-deformation-induced donor-like effects can introduce a high concentration of electrons to change the thermoelectric properties through the evolution of intrinsic point defects. However, the evolution law of these point defects during sample preparation remains elusive. Herein, we systematically investigate the evolution of intrinsic point defects in -type BiTe-based materials from the perspective of thermodynamics and kinetics, in combination with positron annihilation measurement.