Grain-Boundary Elimination via Liquid Medium Annealing toward High-Efficiency SbSe Solar Cells.

Suppression of charge recombination caused by unfavorable grain boundaries (GBs) in polycrystalline thin films is essential for improving the optoelectronic performance of semiconductor devices. For emerging antimony selenide (SbSe) materials, the unique quasi-1D structure intensifies the dependence of GB properties on the grain size and orientation, which also increases the impact of defects related to grain structure on device performance. However, these characteristics pose significant challenges in the preparation of thin films.