Ultraprecise aspheric mirrors that offer nanofocusing and high coherence are indispensable for developing third-generation synchrotron radiation and X-ray free-electron laser sources. In industry, the extreme ultraviolet (wavelength: 13.5 nm) lithography used for high-accuracy aspheric mirrors is a promising technology for fabricating semiconductor devices.
View Article and Find Full Text PDFX-ray generation based on laser-electron Compton scattering is one attractive method to achieve a compact laboratory-sized high-brightness x-ray source. We have designed, built, and tested such a source; it combines a 50 MeV multibunch electron linac with a mode-locked 1064 nm laser stored and amplified in a Fabry-Perot optical cavity. We directly observed trains of pulsed x rays using a microchannel plate detector; the resultant yield was found to be 1.
View Article and Find Full Text PDFJ Electron Microsc (Tokyo)
June 2004
The microstructure at the interface of diffusion-bonded joints of oxygen-free high-conductivity copper for two kinds of surface conditions, with and without argon ion bombardment treatment, was investigated using scanning and high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy. The results showed that argon ion bombardment effectively removed the surface oxide film layer and lowered the height of the surface asperity, so that inclusion formation was decreased and void shrinkage time was shortened at the interface of the bonded copper joints, and the tensile strength of diffusion-bonded copper joints was improved obviously.
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