Illuminating the second conduction band and spin-orbit energy in single wurtzite InP nanowires.

We use polarized photoluminescence excitation spectroscopy to observe the energy and symmetry of the predicted second conduction band in 130 nm diameter wurtzite InP nanowires. We find direct spectroscopic signatures for optical transitions among the A, B, and C hole bands and both the first and the second conduction bands. We determine that the splitting between the first and second conduction bands is 228 ± 7 meV in excellent agreement with theory.

Optical, structural, and numerical investigations of GaAs/AlGaAs core-multishell nanowire quantum well tubes.

The electronic properties of thin, nanometer scale GaAs quantum well tubes embedded inside the AlGaAs shell of a GaAs core-multishell nanowire are investigated using optical spectroscopies. Using numerical simulations to model cylindrically and hexagonally symmetric systems, we correlate these electronic properties with structural characterization by aberration-corrected scanning transmission electron microscopy of nanowire cross sections. These tubular quantum wells exhibit extremely high quantum efficiency and intense emission for extremely low submicrowatt excitation powers in both photoluminescence and photoluminescence excitation measurements.

Transient Rayleigh scattering: a new probe of picosecond carrier dynamics in a single semiconductor nanowire.

Using a new technique, transient Rayleigh scattering, we show that measurements from a single GaAs/AlGaAs core-shell semiconductor nanowire provide sensitive and detailed information on the time evolution of the density and temperature of the electrons and holes after photoexcitation by an intense laser pulse. Through band filling, band gap renormalization, and plasma screening, the presence of a dense and hot electron-hole plasma directly influences the real and imaginary parts of the complex index of refraction that in turn affects the spectral dependence of the Rayleigh scattering cross-section in well-defined ways. By measuring this spectral dependence as a function of time, we directly determine the thermodynamically independent density and temperature of the electrons and holes as a function of time after pulsed excitation as the carriers thermalize to the lattice temperature.

Photomodulated rayleigh scattering of single semiconductor nanowires: probing electronic band structure.

The internal electronic structures of single semiconductor nanowires can be resolved using photomodulated Rayleigh scattering spectroscopy. The Rayleigh scattering from semiconductor nanowires is strongly polarization sensitive which allows a nearly background-free method for detecting only the light that is scattered from a single nanowire. While the Rayleigh scattering efficiency from a semiconductor nanowire depends on the dielectric contrast, it is relatively featureless as a function of energy.

The morphology and evolution of bipyramidal gold nanoparticles.

We examine the growth and evolution with time of bipyramidal gold nanoparticles grown by a seed-mediated process. The nanoparticles are characterized both by their physical dimensions determined by transmission electron microscopy and by the wavelength position of their localized surface plasmon resonance. Each growth's physical dimensions correspond to particular initial conditions, and we observe two distinct modes of temporal evolution during growth.

Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires.

Highly strained GaAs/GaP nanowires of excellent optical quality were grown with 50 nm diameter GaAs cores and 25 nm GaP shells. Photoluminescence from these nanowires is observed at energies dramatically shifted from the unstrained GaAs free exciton emission energy by 260 meV. Using Raman scattering, we show that it is possible to separately measure the degree of compressive and shear strain of the GaAs core and show that the Raman response of the GaP shell is consistent with tensile strain.

Novel growth and properties of GaAs nanowires on Si substrates.

Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs buffer layers. We find that the V/III precursor ratio and growth temperature are crucial factors influencing the morphology and quality of buffer layers. A double layer structure, consisting of a thin initial layer grown at low V/III ratio and low temperature followed by a layer grown at high V/III ratio and high temperature, is crucial for achieving straight, vertically aligned GaAs nanowires on Si(111) substrates.

The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires.

InP nanowires were grown on 111B InP substrates by metal-organic chemical vapour deposition in the presence of colloidal gold particles as catalysts. Transmission electron microscopy and photoluminescence measurements were carried out to investigate the effects of V/III ratio and nanowire diameter on structural and optical properties. Results show that InP nanowires grow preferably in the wurtzite crystal structure than the zinc blende crystal structure with increasing V/III ratio or decreasing diameter.

Carrier dynamics and quantum confinement in type II ZB-WZ InP nanowire homostructures.

We use time-resolved photoluminescence from single InP nanowires containing both wurtzite (WZ) and zincblende (ZB) crystalline phases to measure the carrier dynamics of quantum confined excitons in a type-II homostructure. The observed recombination lifetime increases by nearly 2 orders of magnitude from 170 ps for excitons above the conduction and valence band barriers to more than 8400 ps for electrons and holes that are strongly confined in quantum wells defined by monolayer-scale ZB sections in a predominantly WZ nanowire. A simple computational model, guided by detailed high-resolution transmission electron microscopy measurements from a single nanowire, demonstrates that the dynamics are consistent with the calculated distribution of confined states for the electrons and holes.

Unexpected benefits of rapid growth rate for III-V nanowires.

In conventional planar growth of bulk III-V materials, a slow growth rate favors high crystallographic quality, optical quality, and purity of the resulting material. Surprisingly, we observe exactly the opposite effect for Au-assisted GaAs nanowire growth. By employing a rapid growth rate, the resulting nanowires are markedly less tapered, are free of planar crystallographic defects, and have very high purity with minimal intrinsic dopant incorporation.

Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowires.

Low-temperature time-resolved photoluminescence spectroscopy is used to probe the dynamics of photoexcited carriers in single InP nanowires. At early times after pulsed excitation, the photoluminescence line shape displays a characteristic broadening, consistent with emission from a degenerate, high-density electron-hole plasma. As the electron-hole plasma cools and the carrier density decreases, the emission rapidly converges toward a relatively narrow band consistent with free exciton emission from the InP nanowire.

Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowires.

Nonequilibrium spin distributions in single GaAs/AlGaAs core-shell nanowires are excited using resonant polarized excitation at 10 K. At all excitation energies, we observe strong photoluminescence polarization due to suppressed radiative recombination of excitons with dipoles aligned perpendicular to the nanowire. Excitation resonances are observed at 1- or 2-LO phonon energies above the exciton ground states.

High efficiency photonic crystal based wavelength demultiplexer.

A highly efficient design of a two-channel wavelength demultiplexer in the visible region is presented with finite-difference time-domain simulations. The design process is described in detail with particular attention to the challenges inherent in fabrication of an actual device. A 2D triangular lattice photonic crystal with 75nm air pores in a silicon nitride planar waveguide provides the confinement for visible light.

Edge enhancement of a phase-conjugate image with a mutually pumped phase conjugator.

Usually edge enhancement of optical images is produced by introduction of loss into the low spatial frequency components of the image-bearing beam in the Fourier plane of a lens. We report on edge-enhanced phase-conjugate images from a mutually pumped conjugator accomplished by spatial filtering in the Fraunhofer diffraction region of the input beams. High-resolution (128-160 lines/mm) edge-enhanced images are obtained through traditional spatial filtering in the Fourier plane and in the Fraunhofer regime.

High-resolution phase-conjugate imaging in double-pumped phase conjugators.

Phase-conjugate images with a resolution greater than 250 lines/mm are obtained through the use of a bridge, double-pumped phase conjugator. We demonstrate that this conjugator can carry out imageprocessing tasks, such as the addition and subtraction of complex spatial distributions, with a spatial resolution of >100 lines/mm. These results represent a significant improvement over previously reported resolutions obtained from photorefractive mutually pumped phase conjugators and approach the theoretical limit imposed by the grating spacing and cross talk.