Proximity-Induced Exchange Interaction and Prolonged Valley Lifetime in MoSe/CrSBr Van-Der-Waals Heterostructure with Orthogonal Spin Textures.

Heterostructures, composed of semiconducting transition-metal dichalcogenides (TMDC) and magnetic van-der-Waals materials, offer exciting prospects for the manipulation of the TMDC valley properties via proximity interaction with the magnetic material. We show that the atomic proximity of monolayer MoSe and the antiferromagnetic van-der-Waals crystal CrSBr leads to an unexpected breaking of time-reversal symmetry, with originally perpendicular spin directions in both materials. The observed effect can be traced back to a proximity-induced exchange interaction via first-principles calculations.

Ultrathin natural biotite crystals as a dielectric layer for van der Waals heterostructure applications.

Biotite, an iron-rich mineral belonging to the trioctahedral mica group, is a naturally abundant layered material (LM) exhibiting attractive electronic properties for application in nanodevices. Biotite stands out as a non-degradable LM under ambient conditions, featuring high-quality basal cleavage-a significant advantage for van der Waals heterostructure (vdWH) applications. In this work, we present the micro-mechanical exfoliation of biotite down to monolayers (1Ls), yielding ultrathin flakes with large areas and atomically flat surfaces.

Charge Transfer and Asymmetric Coupling of MoSe Valleys to the Magnetic Order of CrSBr.

van der Waals heterostructures composed of two-dimensional (2D) transition metal dichalcogenides and vdW magnetic materials offer an intriguing platform to functionalize valley and excitonic properties in nonmagnetic TMDs. Here, we report magneto photoluminescence (PL) investigations of monolayer (ML) MoSe on the layered A-type antiferromagnetic (AFM) semiconductor CrSBr under different magnetic field orientations. Our results reveal a clear influence of the CrSBr magnetic order on the optical properties of MoSe, such as an anomalous linear-polarization dependence, changes of the exciton/trion energies, a magnetic-field dependence of the PL intensities, and a valley -factor with signatures of an asymmetric magnetic proximity interaction.

Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires.

Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samples. We evidence an electron concentration gradient ranging from below 1 × 10cmto 3.

Electrical and optical properties of transition metal dichalcogenides on talc dielectrics.

Advanced van der Waals (vdW) heterostructure devices rely on the incorporation of high quality dielectric materials which need to possess a low defect density as well as being atomically smooth and uniform. In this work we explore the use of talc dielectrics as a potentially clean alternative substrate to hexagonal boron nitride (hBN) for few-layer transition metal dichalcogenide (TMDC) transistors and excitonic TMDC monolayers. We find that talc dielectric transistors show small hysteresis which does not depend strongly on sweep rate and show negligible leakage current for our studied dielectric thicknesses.

The role of As species in self-catalyzed growth of GaAs and GaAsSb nanowires.

Precise control and broad tunability of the growth parameters are essential in engineering the optical and electrical properties of semiconductor nanowires (NWs) to make them suitable for practical applications. To this end, we report the effect of As species, namely As and As, on the growth of self-catalyzed GaAs based NWs. The role of As species is further studied in the presence of Te as n-type dopant in GaAs NWs and Sb as an additional group V element to form GaAsSb NWs.

Unconventional Magnetization Generated from Electron Beam and Femtosecond Irradiation on α-AgWO: A Quantum Chemical Investigation.

Novel magnetic metals and metal oxides that use both the spin and charge of an electron offer exciting technological applications. Their discovery could boost research on functional nanoscale materials. Here, for the first time, we report the magnetization of α-AgWO under electron beam and femtosecond laser irradiation.

Optimization of Ohmic Contacts to p-GaAs Nanowires.

The performance of Ohmic contacts applied to semiconductor nanowires (NWs) is an important aspect for enabling their use in electronic or optoelectronic devices. Due to the small dimensions and specific surface orientation of NWs, the standard processing technology widely developed for planar heterostructures cannot be directly applied. Here, we report on the fabrication and optimization of Pt/Ti/Pt/Au Ohmic contacts for p-type GaAs nanowires grown by molecular beam epitaxy.

Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires.

Effective and controllable doping is instrumental for enabling the use of III-V semiconductor nanowires (NWs) in practical electronics and optoelectronics applications. To this end, dopants are incorporated during self-catalyzed growth via vapor-liquid-solid mechanism through the catalyst droplet or by vapor-solid mechanism of the sidewall growth. The interplay of these mechanisms together with the competition between axial elongation and radial growth of NWs can result in dopant concentration gradients along the NW axis.

Spin injection in n-type resonant tunneling diodes.

We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X-). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to -88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.

Spin effects in InAs self-assembled quantum dots.

We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW). We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.

Circular polarization in a non-magnetic resonant tunneling device.

We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW.