High-performance waveguide-coupled lateral Ge/Si avalanche photodetector.

A high-performance waveguide-coupled lateral avalanche photodetector (APD) is experimentally demonstrated without silicon epitaxy and charge layer ion implantation. At the wavelength of 1550 nm, it shows a high responsivity of 48 A/W and a gain-bandwidth product (GBP) of 360 GHz. Wide-open eye diagrams at 25 Gbps can be observed at various avalanche gains.

GeSn resonance cavity enhanced photodetector with gold bottom reflector for the L band optical communication.

In this work, GeSn resonant cavity enhanced (RCE) p-i-n photodetectors (PDs) with 3.7% Sn content in a GeSn layer were fabricated on a silicon on insulator (SOI) substrate. The gold (Au) layer and the deposited SiO layer constitute the bottom reflector and top reflector of the RCE detectors, respectively.

High-speed and high-power germanium photodetector based on a trapezoidal absorber.

A compact high-power germanium photodetector (Ge PD) is experimentally demonstrated by re-engineering light distribution in the absorber. Compared with a conventional Ge PD, the proposed structure shows a DC saturation photocurrent improved by 28.9% and 3 dB bandwidth as high as 49.

[Performance evaluation of Mindray BS-200 automatic biochemistry analyzer].

Objective: To evaluate the main performance of BS-200 automatic biochemistry analyzer.

Methods: To evaluate the repeatability, linearity, precision and accurate Of the BS-200 automatic biochemistry analyzer by 8 items that contain all wavelength (ALT, GGT, Cl-, Cr, Glu, TP, Alb. APOA1.