Influence of Oxygen Vacancy Density on the Polaronic Configuration in Rutile.

Polaronic configurations that were introduced by oxygen vacancy in rutile TiO₂ crystal have been studied by the DFT + method. It is found that the building block of TiO₆ will expand when extra electron is trapped in the central Ti atom as polaron. With manually adjusting the initial geometry of oxygen vacancy structure, a variety of polaronic configurations are obtained after variable-cell relaxation.

Synthesis of carbon nanowall by plasma-enhanced chemical vapor deposition method.

Plasma-enhanced chemical vapor deposition (PECVD) is widely used for the synthesis of carbon materials, such as diamond-like carbons (DLCs), carbon nanotubes (CNTs) and carbon nanowalls (CNWs). Advantages of PECVD are low synthesis temperature compared with thermal CVD and the ability to grow vertically, free-standing structures. Due to its self-supported property and high specific surface area, CNWs are a promising material for field emission devices and other chemical applications.

Resistive switching effect in titanium oxides.

Resistive switching (RS) phenomena have been vigorously investigated in a large variety of materials and highlighted for its preeminent potential for the future nonvolatile semiconductor memory applications or reconfigurable logic circuits. Among the various resistive switching materials, the binary metal oxides demonstrate more advantageous for micro- or nano-electronics applications due to their simpler fabrication process and compatibility with conventional CMOS technology, though the mechanisms are controversial due to the diversity of RS effects. This review mainly focuses on the current understanding of the microscopic nature of RS in titanium oxides, in which the working mechanisms can be categorized into thermochemical metallization mechanism, valence change mechanism, and electrostatic/electronic mechanism.

A compact model for multi-island single electron transistors.

Multi-island single electron transistor is an important kind of the single electron transistor, which is convenient to realize the controllable room temperature operation. A novel semi-empirical compact model for the Multi-island single electron transistor is proposed. The new approach combines the orthodox theory of the single electron tunneling through single coulomb island and a novel empirical analysis procedure for the chain of multi coulomb islands to solve the current of the whole multi-island single electron transistor.

A novel fabrication method for titania resistive switching device.

The titania showing reversible resistive switching are attractive for today's semiconductor technology in nonvolatile random-access memories. A novel fabrication method for titania resistive switching device with vertical structure is proposed. First, the Pt electrode was fabricated the bottom using conventional photolithography and chemical etching technique.

Advances in the modeling of single electron transistors for the design of integrated circuit.

Single electron transistor (SET) has become a promising candidate for the key device of logic circuit in the near future. The advances of recent 5 years in the modeling of SETs are reviewed for the simulation of SET/hybrid CMOS-SET integrated circuit. Three dominating SET models, Monte Carlo model, master equation model and macro model, are analyzed, tested and compared on their principles, characteristics, applicability and development trend.