Performance Improvement of TiO Ultraviolet Photodetectors by Using Atomic Layer Deposited AlO Passivation Layer.

This study employed atomic layer deposition (ALD) to fabricate an AlO passivation layer to optimize the performance of ultraviolet (UV) photodetectors with a TiO-nanorod-(NR)-containing active layer and a solid-liquid heterojunction (SLHJ). To reduce the processing time and enhance light absorption, a hydrothermal method was used to grow a relatively thick TiO-NR-containng working electrode. Subsequently, a 5-nm-thick AlO passivation layer was deposited on the TiO NRs through ALD, which has excellent step coverage, to reduce the surface defects in the TiO NRs and improve the carrier transport efficiency.