Enhancement of Rashba spin-orbit coupling by electron confinement at the LaAlO/SrTiO interface.

Electrical transport property is closely related to the dimensionality of carriers' distribution. In this work, we succeed in tuning the carriers' distribution and the Rashba spin-orbit coupling at LaAlO/SrTiO interface by varying the oxygen pressure (c-P ) adopted in crystalline LaAlO growth. Measurements of the in-plane anisotropic magnetoresistance and the conducting-layer thickness indicate that the carriers' distribution changes from three to two dimensions with c-P increasing, i.

Interaction between in-gap states and carriers at the conductive interface between perovskite oxides.

The 2D electron systems of SrTiO/NdGaO (STO/NGO) and amorphous-LaAlO/SrTiO/NdGaO (a-LAO/STO/NGO) heterojunctions were explored. An obvious interaction between in-gap states (IGSs) and carriers was found. The IGSs can trap a large number of carriers and enhance carrier scattering.

Formation of Two-dimensional Electron Gas at Amorphous/Crystalline Oxide Interfaces.

Experimentally, we found the percentage of low valence cations, the ionization energy of cations in film, and the band gap of substrates to be decisive for the formation of two-dimensional electron gas at the interface of amorphous/crystalline oxide (a-2DEG). Considering these findings, we inferred that the charge transfer from the film to the interface should be the main mechanism of a-2DEG formation. This charge transfer is induced by oxygen defects in film and can be eliminated by the electron-absorbing process of cations in the film.