Widely-tunable, narrow-linewidth III-V/silicon hybrid external-cavity laser for coherent communication.

We demonstrate a III-V/silicon hybrid external cavity laser with a tuning range larger than 60 nm at the C-band on a silicon-on-insulator platform. A III-V semiconductor gain chip is hybridized into the silicon chip by edge-coupling the silicon chip through a SiN spot size converter. The demonstrated packaging method requires only passive alignment and is thus suitable for high-volume production.

Symmetrical polarization splitter/rotator design and application in a polarization insensitive WDM receiver.

In integrated photonics, the design goal of a polarization splitter/rotator (PSR) has been separating the TE0 and TM0 modes in a waveguide. This is a natural choice. But in theory, a PSR only needs to project the incoming State Of Polarization (SOP) orthogonally to its output ports, using any orthogonal mode basis set in the fiber.

Phase coherence length in silicon photonic platform.

We report for the first time two typical phase coherence lengths in highly confined silicon waveguides fabricated in a standard CMOS foundry's multi-project-wafer shuttle run in the 220nm silicon-on-insulator wafer with 248nm lithography. By measuring the random phase fluctuations of 800 on-chip silicon Mach-Zehnder interferometers across the wafer, we extracted, with statistical significance, the coherence lengths to be 4.17 ± 0.

Design and optimization of a novel silicon-on-insulator wavelength diplexer.

We propose a novel silicon-on-insulator (SOI) wavelength diplexer design based on an adiabatic bent taper and an unconventional multimode waveguide. The geometry of the device is optimized using particle swarm optimization (PSO). The device has an ultra-short length of 15 μm.

Ultracompact silicon-on-insulator polarization rotator for polarization-diversified circuits.

We present an ultracompact (15.3 μm long) and high-efficiency silicon-on-insulator polarization rotator designed for polarization-diversified circuits. The rotator is comprised of a bilevel-tapered TM0-to-TE1 mode converter and a novel bent-tapered TE1-to-TE0 mode converter.

Silicon Mod-MUX-Ring transmitter with 4 channels at 40 Gb/s.

We propose for the first time the Mod-MUX-Ring architecture for microring based WDM transmitter. A prototype Mod-MUX-Ring transmitter with 4 channels and 400 GHz channel spacing is demonstrated and fully characterized at 40 Gb/s channel rate. Under 2.

Efficient, compact and low loss thermo-optic phase shifter in silicon.

We design a resistive heater optimized for efficient and low-loss optical phase modulation in a silicon-on-insulator (SOI) waveguide and characterize the fabricated devices. Modulation is achieved by flowing current perpendicular to a new ridge waveguide geometry. The resistance profile is engineered using different dopant concentrations to obtain localized heat generation and maximize the overlap between the optical mode and the high temperature regions of the structure, while simultaneously minimizing optical loss due to free-carrier absorption.

Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm.

The wavelength band near 1300 nm is attractive for many telecommunications applications, yet there are few results in silicon that demonstrate high-speed modulation in this band. We present the first silicon modulator to operate at 50 Gbps near 1300 nm. We demonstrate an open eye at this speed using a differential 1.

Ultralow loss single layer submicron silicon waveguide crossing for SOI optical interconnect.

We demonstrate compact, broadband, ultralow loss silicon waveguide crossings operating at 1550 nm and 1310 nm. Cross-wafer measurement of 30 dies shows transmission insertion loss of - 0.028 ± 0.