Photoelectrochemical detection of Cu based on ZnInS/WO Z-scheme heterojunction.

A one-step hydrothermal technique was utilized to generate WO nanosheets on fluorine-doped tin oxide (FTO) (WO/FTO), which were subsequently modified with ZnInS microspheres to create a Z-scheme heterojunction ZnInS/WO/FTO electrode for Cu detection. The heterojunction exhibited excellent photoelectric conversion efficiency, which was nearly 2.5-fold and 5.

Strain controllable band alignment and the interfacial and optical properties of tellurene/GaAs van der Waals heterostructures.

By using first principles calculations, we theoretically investigate the electronic structures and the interfacial and optical properties of the two-dimensional tellurene (Te)-gallium arsenide (GaAs) van der Waals heterostructures (vdWHs), , α-Te/GaAs and γ-Te/GaAs, formed using Te and GaAs monolayers. It has been demonstrated that, the semiconductor-semiconductor contacted α-Te/GaAs vdWH exhibits a type-II band alignment with a direct band gap of 0.28 eV while the metal-semiconductor contacted γ-Te/GaAs vdWH has a p-type Schottky contact with a Schottky barrier height (SBH) of 0.