Continuous-wave and passively Q-switched pulsed 1.5 µm Er:Yb:BaGd(PO) lasers.

An eye-safe 1567 nm continuous-wave laser with a maximum output power of 50 mW and a slope efficiency of 21.1% was demonstrated in an Er:Yb:BaGd(PO) crystal. By using a Co:MgAlO crystal with an initial transmission of 95% as a saturable absorber, a stable passively Q-switched pulsed laser was also realized in the crystal.

25.4 kW, 1.9 ns passively Q-switched 1522 nm Er:Yb:LuAl(BO) pulse microlaser at 100 Hz.

Passively Q-switched Er:Yb:LuAl(BO) pulse microlasers were investigated at a low repetition frequency of 10-200 Hz. End-pumped by a 975.6 nm quasi-continuous-wave laser diode with pump pulse width of 0.

The growth of a large GdPO crystal guided by theoretical simulation and the study of its phonon properties.

It has remained a big challenge to grow large crystals of compounds at very anisotropic crystal growth rates. GdPO is such an example, which usually grows into a needle-like shape. This work solved this problem by using Li ions, predicted by first-principles calculations, to adjust the crystal morphology of GdPO.

Single longitudinal-mode passively Q-switched 1537 nm Er:Yb:LuSiO pulse microchip laser.

A single longitudinal-mode passively Q-switched 1537 nm pulse microchip laser was realized in an Er:Yb:LuSiO crystal. The effects of the pump beam diameter and output mirror transmission on pulse characteristics of the Er:Yb:LuSiO microchip laser were investigated, when a Co:MgAlO saturable absorber with an initial transmission of 95% was used. At an absorbed pump power of 3.

Cavity-dumped Q-switched Er:Yb:YAl(BO) pulse laser.

We reported an electro-optically cavity-dumped Q-switched Er:Yb:YAl(BO) pulse laser for the first time. A 1531.1 nm pulse laser with an average output power of 521 mW, energy of 10 µJ, and a duration of 3.

Continuously diode-pumped passively $Q$Q-switched eye-safe 1537 nm Er:Yb:LuSiO pulse laser.

It is still a technical challenge to obtain a 1.55 µm passively $Q$Q-switched ${{\rm Er}^{3 + }}/{{\rm Yb}^{3 + }}$Er/Yb pulse laser with high energy and high repetition frequency, especially when it is end-pumped by a continuous-wave 0.98 µm diode laser.

Spectra and diode-pumped continuous-wave 1.55 µm laser of Er:Yb:CaNbGaSiO crystal.

The polarized spectra associated with 1.55 µm lasing in an Er:Yb:CaNbGaSiO crystal were investigated at room temperature. The crystal had a large absorption cross section of 3.

Single-longitudinal-mode 1521 nm passively q-switched Er:Yb:YAl(BO) pulse microchip laser.

A single-longitudinal-mode 1521 nm pulse microchip laser Q-switched by a Co:MgAlO saturable absorber was demonstrated in an Er:Yb:YAl(BO) crystal. The influence of the waist radius of pump beam at 976 nm on the laser performance was investigated. At an incident pump power of 6.

940 mW 1564 nm multi-longitudinal-mode and 440 mW 1537 nm single-longitudinal-mode continuous-wave Er:Yb:LuSiO microchip lasers.

An Er:Yb:LuSiO microchip laser was constructed by placing a 1.2 mm thick, Y-cut Er:Yb:LuSiO microchip between two 1.2 mm thick sapphire crystals, in which input and output mirrors were directly deposited onto one face of each crystal.

Efficient continuous-wave and passively Q-switched pulse laser operations in a diffusion-bonded sapphire/Er:Yb:YAl(BO)/sapphire composite crystal around 1.55 μm.

A composite crystal consisting of a 1.5-mm-thick Er:Yb:YAl(BO) crystal between two 1.2-mm-thick sapphire crystals was fabricated by the thermal diffusion bonding technique.

Efficient 1620 nm continuous-wave laser operation of Czochralski grown Er:Yb:LuSiO crystal.

Efficient continuous-wave diode-pumped laser operation of Czochralski grown Er:Yb:LuSiO crystal is reported. Polarized absorption and emission spectra, fluorescence lifetimes, and energy transfer efficiency from Yb to Er were determined. A maximal output power of 522 mW was achieved at 1620 nm with slope efficiency of 15.

Efficient continuous-wave diode-pumped Er:Yb:LaMgBO laser with sapphire cooling at 1.57 μm.

Efficient 1.57 μm continuous-wave laser was demonstrated in an X-cut, 2.0 mm-thick Er:Yb:LaMgBO crystal with sapphire cooling end-pumped by a 976 nm laser diode.

Real-time measurement of temperature distribution inside a gain medium of a diode-pumped Er/Yb 1.55 μm laser.

A scheme to measure temperature distribution inside a gain medium of a diode-pumped solid-state laser is proposed based on the fluorescence intensity ratio technique. By recording the temperature-dependent upconversion fluorescence related to the H2→I4 and S4→I4 transitions of Er, the real-time temperature distribution inside an Er:Yb:LuAl(BO) crystal end-pumped by a 976 nm diode laser can be measured while a 1.55 μm laser is operating.

Fabrication and diode-pumped 1.55 μm continuous-wave laser performance of a diffusion-bonded Er:Yb:YAl(BO)/YAl(BO) composite crystal.

A composite crystal consisting of a 0.4-mm-thick (1.1 at.

Hyaluronic acid-nimesulide conjugates as anticancer drugs against CD44-overexpressing HT-29 colorectal cancer in vitro and in vivo.

Carrier-mediated drug delivery systems are promising therapeutics for targeted delivery and improved efficacy and safety of potent cytotoxic drugs. Nimesulide is a multifactorial cyclooxygenase 2 nonsteroidal anti-inflammatory drug with analgesic, antipyretic and potent anticancer properties; however, the low solubility of nimesulide limits its applications. Drugs conjugated with hyaluronic acid (HA) are innovative carrier-mediated drug delivery systems characterized by CD44-mediated endocytosis of HA and intracellular drug release.

Enhanced performances of diode-pumped sapphire/Er³⁺:Yb³⁺:LuAl₃(BO₃)₄/sapphire micro-laser at 1.5-1.6 μm.

A sandwich-type sapphire/Er3+:Yb3+:LuAl3(BO3)4/sapphire micro-laser was fabricated by tightly pressing two sapphire crystals and a Er3+:Yb3+:LuAl3(BO3)4 microchip together, and directly depositing cavity mirrors onto the outside surfaces of the sapphire crystals. Pumped by a continuous-wave 976 nm diode laser, a 1543 nm laser with maximum output power of 1.17 W and slope efficiency of 33% with respect to incident pump power was realized in the sandwich-type micro-laser, whereas a laser with maximum output power of 0.

Spectroscopic properties and continuous-wave laser operation of Yb:Bi₄ Si₃ O₁₂ crystal.

Yb3+:Bi4Si3O12 single crystal with Yb3+ concentration of 5.7 at.% has been grown successfully by the Czochralski method.

Diode-pumped 1.5-1.6 μm laser operation in Er³⁺ doped YbAl₃(BO₃)₄ microchip.

Er3+ doped YbAl3(BO3)4 crystal with large absorption coefficient of 184 cm(-1) at pump wavelength of 976 nm is a promising microchip gain medium of 1.5-1.6 μm laser.

Novel Garnet-structure Ca(2)GdZr(2)(AlO(4))3:Ce(3+) phosphor and its structural tuning of optical properties.

Aluminate garnet phosphors Ca2GdZr2(AlO4)3:Ce(3+) (CGZA:Ce(3+)) for solid-state white lighting sources are reported. The crystal structure and Mulliken bonding population of the CGZA:Ce(3+) have been analyzed. The larger 5d ((2)D) barycenter shift εc and smaller phenomenological parameter 10Dq of Ce(3+) in CGZA are related to the larger covalent character of Ce-O.

Diode-pumped passively Q-switched Er3+:Yb3+:Sr3Lu2(BO3)4 laser at 1534 nm.

End-pumped by a 970 nm diode laser, 1534 nm pulse laser with about 16 μJ energy, 48 ns duration, and 21 kHz repetition rate was obtained at absorbed pump power of 11.8 W in a Z-cut 1.08-mm-thick Er(3+):Yb(3+):Sr(3)Lu(2)(BO(3))(4) crystal passively Q-switched by a Co(2+):Mg(0.

Comparative study on the acousto-optic Q-switched pulse performances of 1520 and 1560 nm lasers in Er:Yb:RAl3(BO3)4 (R = Y and Lu) crystals.

1520 and 1560 nm acousto-optic Q-switched pulse lasers with high peak power and narrow width were respectively realized in Er:Yb:RAl(3)(BO(3))(4) (R = Y and Lu) crystals end-pumped by a 970 nm diode laser. For Er:Yb:LuAl(3)(BO(3))(4) crystal, 1520 nm laser with 350 μJ energy, 32 ns width and 10.9 kW peak power, and 1560 nm laser with 520 μJ energy, 67 ns width and 7.

400 mW low noise continuous-wave single-frequency Er,Yb:YAl3(BO3)4 laser at 1.55 μm.

We build up a LD end-pumped Er,Yb:YAB laser at 1.55 μm and improve the laser performance by end cooling the gain medium efficiently through a sapphire plate. 680 mW cw single transverse mode laser output was obtained with the slope efficiency of 16.

Bioluminescence resonance energy transfer using luciferase-immobilized quantum dots for self-illuminated photodynamic therapy.

Photodynamic therapy (PDT) is an innovative method for cancer treatment that involves the administration of a photosensitizing agent followed by exposure to visible light. An appreciable amount of a particular light source is a key to activate photosensitizers in PDT. However, the external excitation light source is a problem for clinical application because of the limitation of tissue-penetrating properties.

Acousto-optic Q-switched self-frequency-doubling Er:Yb:YAl3(BO3)4 laser at 800 nm.

Actively Q-switched self-frequency-doubling laser at 800 nm was first reported in an Er:Yb:YAl3(BO3)4 crystal by using an acousto-optical modulator. At incident pump power of 16 W and pulse repetition frequency of 1 kHz, 1600 nm fundamental pulse laser with energy of 130 μJ and width of 170 ns, and self-frequency-doubling 800 nm pulse laser with energy of 20 μJ and width of 96 ns were respectively achieved in a hemispherical resonator end-pumped by a 970 nm laser diode. Pulse characteristics of fundamental and self-frequency-doubling lasers at different pulse repetition frequencies were also investigated.

Passively Q-switched 1.5-1.6 μm Er:Yb:LuAl3(BO3)4 laser with Co2+:Mg(0.4)Al(2.4)O4 saturable absorber.

Using a Co(2+):Mg(0.4)Al(2.4)O(4) spinel crystal as saturable absorber, efficient passively Q-switched pulse laser operating at 1.