ALD AlO gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT.

The amorphous indium gallium oxide thin film transistor was fabricated using a cosputtering method. Two samples with different gate dielectric layers were used as follows: sample A with a SiO dielectric layer; and sample B with an AlO dielectric layer. The influence of the gate dielectrics on the electric and photo performance has been investigated.

Photoluminescence and photo-induced conductivity in 2D siloxene nanosheet for optoelectronic applications.

Semiconducting 2D siloxene nanosheets of thickness 1.7 nm and band gap of 2.54 eV are synthesized using simple chemical route.

Impact of Oxygen Vacancy on the Photo-Electrical Properties of In₂O₃-Based Thin-Film Transistor by Doping Ga.

In this study, amorphous indium gallium oxide thin-film transistors (IGO TFTs) were fabricated by co-sputtering. Three samples with different deposition powers of the In₂O₃ target, namely, sample A with 50 W deposition power, sample B with 60 W deposition power, and sample C with 70 W deposition power, were investigated. The device performance revealed that oxygen vacancies are strongly dependent on indium content.

Improvement of the performance in Cr-doped ZnO memory devices control of oxygen defects.

The defect-enhanced resistive switching behavior of Cr-doped ZnO films was investigated in this study, and evidence that the switching effect can be attributed to defects was found. X-ray photoelectron spectroscopy demonstrated the existence of oxygen vacancies in the ZnO-based films, and the concentration of oxygen vacancies in the Cr-doped ZnO film was larger than that in the undoped ZnO film, which can be attributed to Cr doping. We concluded that the defects in Cr-doped ZnO were due to the Cr dopant, leading to excellent performance of Cr-doped ZnO films.

Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon.

High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe-MoS junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain.

Nonvolatile bio-memristor fabricated with egg albumen film.

This study demonstrates the fabrication and characterization of chicken egg albumen-based bio-memristors. By introducing egg albumen as an insulator to fabricate memristor devices comprising a metal/insulator/metal sandwich structure, significant bipolar resistive switching behavior can be observed. The 1/f noise characteristics of the albumen devices were measured, and results suggested that their memory behavior results from the formation and rupture of conductive filaments.

Hybrid light-emitting diodes from anthracene-contained polymer and CdSe/ZnS core/shell quantum dots.

In this paper, we added CdSe/ZnS core/shell quantum dots (QDs) into anthracene-contained polymer. The photoluminescent (PL) characteristic of polymer/QD composite film could identify the energy transitions of anthracene-contained polymer and QDs. Furthermore, the electroluminescent (EL) characteristic of hybrid LED also identifies emission peaks of blue polymer and QDs.

Negative differential resistance behavior and memory effect in laterally bridged ZnO nanorods grown by hydrothermal method.

A novel memory device based on laterally bridged ZnO nanorods (NRs) in the opposite direction was fabricated by the hydrothermal growth method and characterized. The electrodes were defined by a simple photolithography method. This method has lower cost, simpler process, and higher reliability than the traditional focused ion beam lithography method.

An integrated thermal compensation system for MEMS inertial sensors.

An active thermal compensation system for a low temperature-bias-drift (TBD) MEMS-based gyroscope is proposed in this study. First, a micro-gyroscope is fabricated by a high-aspect-ratio silicon-on-glass (SOG) process and vacuum packaged by glass frit bonding. Moreover, a drive/readout ASIC, implemented by the 0.

Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy.

InAs nanofins were prepared on a nanopatterned Si (001) substrate by metal-organic vapor-phase epitaxy. The threading dislocations, stacked on the lowest-energy-facet plane {111}, move along the SiO2 walls, resulting in a dislocation reduction, as confirmed by transmission electron microscopy. The dislocations were trapped within a thin InAs epilayer.

Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2 mask.

GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number of dislocations. The etching pit density of GaAs on the 55 nm round-hole patterned Si substrate is about 3.

Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si.

The optical properties of GaAs nano-wires grown on shallow-trench-patterned Si(001) substrates were investigated by cathodoluminescence. The results showed that when the trench width ranges from 80 to 100 nm, the emission efficiency of GaAs can be enhanced and is stronger than that of a homogeneously grown epilayer. The suppression of non-radiative centers is attributed to the trapping of both threading dislocations and planar defects at the trench sidewalls.

Efficiency enhancement in GaAs solar cells using self-assembled microspheres.

In this study we develop an efficient light harvesting scheme that can enhance the efficiency of GaAs solar cells using self-assembled microspheres. Based on the scattering of the microspheres and the theory of photonic crystals, the path length can be increased. In addition, the self-assembly of microspheres is one of the simplest and the fastest methods with which to build a 2D periodic structure.

Black film for improving the contrast ratio of organic light emitting diodes.

This paper presents a black film with double period metal-organic cathode structure for reducing the cathode reflection and enhancing the contrast ratio (CR) in organic light emitting diodes (OLEDs). The absorption and destructive interference effect caused by the copper-phthalocyanine (CuPc) and ultra thin aluminum (Al) periodic layers decrease the ambient light. The double-period black film structure (Al/CuPc/Al/CuPc/Al) has the lowest reflected luminance of 2.

Thickness for optimizing of organic layer and multi-layer anode on luminance efficiency in white-light top-emission organic light-emitting diodes.

The multilayer contact structures in both the anode and organic layers for top-emission organic light emitting diodes (TEOLEDs) are studied in this paper. The anode consists of aluminum/gold (Al/Au). The Al is used for high reflectivity and Au for high work function by enhancing the hole injection from the anode into the organic hole injection layer.

Electroluminescent Characteristics of DBPPV-ZnO Nanocomposite Polymer Light Emitting Devices.

We have demonstrated that fabrication and characterization of nanocomposite polymer light emitting devices with metal Zinc Oxide (ZnO) nanoparticles and 2,3-dibutoxy-1,4-poly(phenylenevinylene) (DBPPV). The current and luminance characteristics of devices with ZnO nanoparticles are much better than those of device with pure DBPPV. Optimized maximum luminance efficiencies of DBPPV-ZnO (3:1 wt%) before annealing (1.

Analysis of a spatially dispersive displacement sensor utilizing an AlGaInP chip.

We present a demonstration and analysis of an industrialized design of a spatially dispersive displacement sensor, which is composed of an AlGaInP gain chip in visible range, optical assembly, and a spectrum analyzer. The sensor utilizes the spatial dispersion of focus from the optical assembly and wavelength spectrum's deviation induced by the displacement of the target. As a result, the sensor delivers a quick and simple way of measuring displacement.

Spatially dispersive displacement sensor utilizing a semiconductor gain chip.

We demonstrate the development of a simply equipped displacement sensor utilizing spatially dispersive confocal technology. It feeds the amplified spontaneous emission (ASE) of a laser diode to a wavelength-selective feedback structure that corresponds to the position of a measured surface. The displacement sensor has a detecting range of 4 microm and precision of less than 2 nm, as proven by the analysis of the spectral shifts of the multipassed amplified output ASE.

Buckling instabilities in GaN nanotubes under uniaxial compression.

We report experimental observations of shell buckling instabilities in free-standing, vertically aligned GaN nanotubes subjected to uniaxial compression. Highly uniform arrays of the GaN nanotubes standing on a GaN template were fabricated and subjected to uniaxial compression using a nanoindenter. The buckling load was found to be of the order of 150 microN for the GaN nanotubes with an outer radius of 40 nm, an inner radius of 20 nm, and heights of 500 and 300 nm.