Modeling of the electron beam induced current signal in nanowires with an axial p-n junction.

A tridimensional mathematical model to calculate the electron beam induced current (EBIC) of an axial p-n nanowire junction is proposed. The effect of the electron beam and junction parameters on the distribution of charge carriers and on the collected EBIC current is reported. We demonstrate that the diffusion of charge carriers within the wire is strongly influenced by the electrical state of its lateral surface which is characterized by a parameter called surface recombination velocity ().