Deep-ultraviolet n-ZnGaO/p-GaN heterojunction photodetector fabricated by pulsed laser deposition.

Zinc gallium oxide (ZnGaO) has attracted considerable interest in deep-ultraviolet photodetectors, due to the ultrawide bandgap, high transmittance in the ultraviolet (UV) region, and excellent environmental stability. In this study, ZnGaO thin films were deposited on p-GaN epi-layers using pulsed laser deposition, resulting in improved crystalline quality. The ZnGaO film exhibited a bandgap of 4.

Highly stable mixed-phase Cs-Cu-I films with tunable optoelectronic properties for UVB photodetector applications.

Ultraviolet (UV) photodetector plays an important role in military, civilian and people's daily life, and is an indispensable part of spectral detection. However, photodetectors target at the UVB region (280-320 nm) are rarely reported, and the devices detected by medium-wave UV light generally have problems such as low detection rate, low sensitivity, and poor stability, which are difficult to meet the market application needs. Herein, Cs-Cu-I films with mixed-phase have been prepared by vacuum thermal evaporation.

Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGaO heterojunction with high sensitivity and fast speed.

Self-powered deep ultraviolet photodetectors (DUV PDs) are essential in environmental monitoring, flame detection, missile guidance, aerospace, and other fields. A heterojunction photodetector based on p-CuI/n-ZnGaO has been fabricated by pulsed laser deposition combined with vacuum thermal evaporation. Under 260 nm DUV light irradiation, the photodetector exhibits apparent self-powered performance with a maximum responsivity and specific detectivity of 2.

Sensitivity analysis and correction algorithms for atmospheric CO measurements with 1.57-µm airborne double-pulse IPDA LIDAR.

In this study, a 1.57-µm airborne double-pulse integrated-path differential absorption (IPDA) light detection and ranging (LIDAR) system was developed for CO measurements. This airborne IPDA LIDAR is integrated with a real-time frequency monitoring system, an integrated sensor for temperature, pressure, and humidity, an inertial navigation system, and a global positioning system.

Analysis of energy monitoring for a double-pulsed CO integrated path differential absorption lidar at 1.57 μm.

For double-pulsed 1.57 μm integrated path differential absorption lidar, the transmitted pulse energy measurement is an important factor that can influence the uncertainty of CO concentration measurement. An energy monitoring experiment was performed to determine how to improve the measurement precision of the transmitted pulse energy.

Double-pulse 1.57 μm integrated path differential absorption lidar ground validation for atmospheric carbon dioxide measurement.

A ground-based double-pulse integrated path differential absorption (IPDA) instrument for carbon dioxide (CO) concentration measurements at 1572 nm has been developed. A ground experiment was implemented under different conditions with a known wall located about 1.17 km away acting as the scattering hard target.

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N/H-Grown GaN Barrier.

Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H increases from 0 to 6.

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells.

InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at well/barrier upper interface under different temperatures. Hydrogen treatment temperature greatly affects the characteristics of MQWs. Hydrogen treatment conducted at 850 °C improves surface and interface qualities of MQWs, as well as significantly enhances room temperature photoluminescence (PL) intensity.