Quantum thermal conductance of electrons in a one-dimensional wire.

We use an electron thermometer to measure the temperature rise of approximately 2 x 10(5) electrons in a two-dimensional box, due to heat flow into the box through a ballistic one-dimensional (1D) constriction. Using a simple model we deduce the thermal conductance kappa(Vg) of the 1D constriction, which we compare to its electrical conductance characteristics; for the first four 1D subbands the heat carried by the electrons passing through the wire is proportional to its electrical conductance G(Vg). In the vicinity of the 0.

Implications of the negative capacitance observed at forward bias in nanocomposite and polycrystalline solar cells.

Four different types of solar cells prepared in different laboratories have been characterized by impedance spectroscopy (IS): thin-film CdS/CdTe devices, an extremely thin absorber (eta) solar cell made with microporous TiO2/In(OH)xSy/PbS/PEDOT, an eta-solar cell of nanowire ZnO/CdSe/CuSCN, and a solid-state dye-sensitized solar cell (DSSC) with Spiro-OMeTAD as the transparent hole conductor. A negative capacitance behavior has been observed in all of them at high forward bias, independent of material type (organic and inorganic), configuration, and geometry of the cells studied. The experiments suggest a universality of the underlying phenomenon giving rise to this effect in a broad range of solar cell devices.

Magnetoresistance of a 2D electron gas caused by electron interactions in the transition from the diffusive to the ballistic regime.

On a high-mobility 2D electron gas we have observed, in strong magnetic fields (omega(c)tau>1), a parabolic negative magnetoresistance caused by electron-electron interactions in the regime of k(B)Ttau/ variant Planck's over 2pi approximately 1, which is the transition from the diffusive to the ballistic regime. From the temperature dependence of this magnetoresistance the interaction correction to the conductivity deltasigma(ee)(xx)(T) is obtained in the situation of a long-range fluctuation potential and strong magnetic field. The results are compared with predictions of the new theory of interaction-induced magnetoresistance.

Hole-hole interaction effect in the conductance of the two-dimensional hole gas in the ballistic regime.

On a high-mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, k(B)Ttau/ variant Planck's over 2pi >1. It is shown that the "metallic" behavior of the resistivity (drho/dT>0) of the low-density 2DHG is caused by the hole-hole interaction effect in this regime. We find that the temperature dependence of the conductivity and the parallel-field magnetoresistance are in agreement with this description, and determine the Fermi-liquid interaction constant Fsigma0 which controls the sign of drho/dT.

Fermi-liquid behavior of the low-density 2D hole gas in a GaAs/AlGaAs heterostructure at large values of r(s).

We examine the validity of the Fermi-liquid description of the dilute 2D hole gas in the crossover from "metallic"-to-"insulating" behavior of rho(T). It has been established that, at r(s) as large as 29, negative magnetoresistance does exist and is well described by weak localization theory. The dephasing time, extracted from the magnetoresistance, is dominated by the T2 term due to hole-hole scattering in the clean limit.