The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is considered to be triggered by just one electron or one hole, and its importance is recognised upon the aggressive scaling. However, the detailed nature of the charge trap remains to be investigated due to the difficulty to find out the exact device, which shows the RTN feature over statistical variations. Here, we show the RTN can be observed from virtually all devices at low temperatures, and provide a methodology to enable a systematic way to identify the bias conditions to observe the RTN.
View Article and Find Full Text PDFBesides being an ancient pigment, BaCuSi2O6 is a quasi-2D magnetic insulator with a gapped spin dimer ground state. The application of strong magnetic fields closes this gap, creating a gas of bosonic spin triplet excitations. The topology of the spin lattice makes BaCuSi2O6 an ideal candidate for studying the Bose-Einstein condensation of triplet excitations as a function of the external magnetic field, which acts as a chemical potential.
View Article and Find Full Text PDFPhys Rev B Condens Matter
December 1996