Study of the heavily p-type doping of cubic GaN with Mg.

We have studied the Mg doping of cubic GaN grown by plasma-assisted Molecular Beam Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions to obtain heavy p-type doping to achieve low resistance films which can be used in bipolar devices. We simulated the Mg-doped GaN transport properties by density functional theory (DFT) to compare with the experimental data.

Growth Mechanism and Properties of Self-Assembled InN Nanocolumns on Al Covered Si(111) Substrates by PA-MBE.

Self-assembled InN nanocolumns were grown at low temperatures by plasma-assisted molecular beam epitaxy with a high crystalline quality. The self-assembling procedure was carried out on AlN/Al layers on Si(111) substrates avoiding the masking process. The Al interlayer on the Si(111) substrate prevented the formation of amorphous SiN.

Sensitivity Tests of Pellets Made from Manganese Antimonate Nanoparticles in Carbon Monoxide and Propane Atmospheres.

Nanoparticles of manganese antimonate (MnSb₂O₆) were prepared using the microwave-assisted colloidal method for its potential application as a gas sensor. For the synthesis of the oxide, manganese nitrate, antimony chloride, ethylenediamine and ethyl alcohol (as a solvent) were used. The precursor material was calcined at 800 °C in air and analyzed by X-ray diffraction.

Precession electron diffraction-assisted crystal phase mapping of metastable c-GaN films grown on (001) GaAs.

The control growth of the cubic meta-stable nitride phase is a challenge because of the crystalline nature of the nitrides to grow in the hexagonal phase, and accurately identifying the phases and crystal orientations in local areas of the nitride semiconductor films is important for device applications. In this study, we obtained phase and orientation maps of a metastable cubic GaN thin film using precession electron diffraction (PED) under scanning mode with a point-to-point 1 nm probe size beam. The phase maps revealed a cubic GaN thin film with hexagonal GaN inclusions of columnar shape.