Probing Surface-Mediated Electronic Coupling in Flat Hexagonal Phosphorus Nanostructures and Monolayer on Au(111).

Due to its diverse allotropes and intriguing properties, 2D phosphorus, also known as phosphorene, is a material of great interest. Here, the successful growth of flat hexagonal 2D phosphorus on Au(111) is reported. Starting from phosphorus linear chains at low coverage, a porous network and finally an extended 2D flat hexagonal (HexP) layer while increasing phosphorus deposition is formed.

Combining Nitrogen Doping and Vacancies for Tunable Resonant States in Graphite.

We investigate the combination of nitrogen doping and vacancies in highly ordered pyrolytic graphite (HOPG), to engineer defect sites with adjustable electronic properties. We combine scanning tunneling microscopy and spectroscopy and density functional theory calculations to reveal the synergistic effects of nitrogen and vacancies in HOPG. Our findings reveal a remarkable shift of the vacancy-induced resonance peak from an unoccupied state in pristine HOPG to an occupied state in nitrogen-doped HOPG.

Spatially Extended Charge Density Wave Switching by Nanoscale Local Manipulation in a VTe Monolayer.

Monolayer transition metal dichalcogenide VTe exhibits multiple charge density wave (CDW) phases, mainly (4 × 4) and (4 × 1). Here we report facile dynamic and tens-of-nanometer scale switching between these CDW phases with gentle bias pulses in scanning tunneling microscopy. Bias pulses purposely stimulate a reversible random CDW symmetry change between the isotropic (4 × 4) and anisotropic (4 × 1) CDWs, as well as CDW phase slips and rotation.

Interface versus Bulk Light-Induced Switching in Spin-Crossover Molecular Ultrathin Films Adsorbed on a Metallic Surface.

Spin-crossover molecules present the unique property of having two spin states that can be controlled by light excitation at low temperature. Here, we report on the photoexcitation of [Fe((3, 5-(CH)Pz)BH)] (Pz = pyrazolyl) ultrathin films, with thicknesses ranging from 0.9 to 5.

Negative Differential Resistance in Spin-Crossover Molecular Devices.

We demonstrate, based on low-temperature scanning tunneling microscopy (STM) and spectroscopy, a pronounced negative differential resistance (NDR) in spin-crossover (SCO) molecular devices, where a Fe SCO molecule is deposited on surfaces. The STM measurements reveal that the NDR is robust with respect to substrate materials, temperature, and the number of SCO layers. This indicates that the NDR is intrinsically related to the electronic structure of the SCO molecule.